Impact of graphene interlayer on performance parameters of sandwich structure Pt/GaN Schottky barrier diodes

Abstract

In this work, we have designed excellent performance GaN-based Schottky barrier diode (SBD) with a sandwich structure by inserting a graphene (Gr) interlayer. The electrical properties of Pt/Gr/GaN and Pt/GaN SBDs have been systematically investigated by the temperature-dependent current—voltage (I–V) and capacitance–voltage measurements in order to explore the effects of Gr on main diode parameters. At room temperature, the Pt/Gr/GaN SBD exhibited lower turn-on voltage (Von), ideality factor (n), differential specific on-resistance (Ron), and higher Schottky barrier height (SBH), signifying enhanced device attributes. Furthermore, the ideality factor and SBH for the Pt/Gr/GaN SBD were found to be insensitive to temperature from the temperature-dependent I–V analysis. The results revealed a highly homogeneous Schottky barrier interface in the case of Pt/Gr/GaN SBD. This facile strategy opened a pathway to improve the performance of the nitride Schottky rectifiers.

Current–voltage characteristics and photovoltaic effect of a Au/ZnFe2O4/GaN Schottky junction

“…Equation ( 3) was applied to determine that the estimated potential barrier V bi was ∼1.32 eV, which was larger than the V bi of ∼0.89 eV estimated from I-V measurement. Our result can be compared with Ran's previous report that the potential barrier value of a Pt/GaN Schottky junction after inserting a graphene interlayer increased from 0.83 eV to 0.91 eV in the I-V measurement and from 0.97 eV to 0.99 eV in C-V measurement, respectively [47]. Previously, a dissimilarity in barrier height estimated from I-V and C-V measurements in MS junctions has been explained by barrier height inhomogeneity, trap states in the band gap or image force lowering that has more impact on I-V measurement in forward bias region than on C-V measurement in the reverse bias region [48,49].…”

Construction of a Cu–Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber

“…Among them, a new phase forms at the M/S interface of the Schottky junction to develop the heterojunction shown in sample B2 (Figure e). It can be attributed to the phenomena of atom diffusion, rearrangement, and then new phase formation at the M/S interface, which are caused by the rapid annealing treatment. , The reduction process proceeds very quickly to form the Sn metal, and then the Sn atoms diffuse into copper, forming the sosoloid of Sn in Cu, the heterojunction in that microstructure. Specifically, owing to the close radii of Cu and Sn ( r Sn / r Cu = 1.354), the sosoloid is a substitution solid solution.…”

Improved barrier homogeneity in Pt/Al0.75Ga0.25N Schottky barrier diodes by graphene interlayer

“…These characteristics make Gr used as a promising Schottky contact interlayer. There are some reports on the use of Gr as a Schottky interlayer between metal and semiconductor [18][19][20], showing the positive effects on the performance of the Schottky contact. However, to the best of our knowledge, the study on AlN or Al x Ga 1−x N with high Al-content based Schottky contacts with Gr interlayer is still lacking.…”