Impact of fin shape variability on device performance towards 10nm node

Abstract

A transition from planar to FinFET brings additional variability sources from 3D channel structure. In this study, the impact of fin shape variability on device performance, especially from the view point of short channel effect control, is investigated with using Sivalidated TCAD. This reveals that the width, height and taper angle of fin have significant impact on the electrostatics of the device. In addition, through the statistical Monte-Carlo simulations with compact model, the impact of fin shape variability is visualized in comparison with conventional device variability sources, i.e., gate length, work function, and equivalent oxide thickness. As a result, fin width and fin angle are found to be major variability source in addition to gate length. This indicates that the suppression of the process variability in fin width and fin angle is key to control device variability, especially in advanced node.

Performance Optimization of FinFET Configurations at 14 nm Technology Using ANN-PSO

“…To replace MOSFETs, FinFETs have occurred as they overcome SCEs and show better performance due to their simpler structure and easier fabrication [1][2][3][4][5]. Fin shape has huge impact on the performance of FinFET [6]. Also, there are some other parameters like fin height, fin angle, doping concentration, temperature which affects the device performance [7][8][9][10][11].…”