Radiation-induced soft error is an ever-increasing concern in the microelectronic industry in order to provide reliable VLSI systems at advanced technology nodes. Most of the redundancy-based methodologies adopt majority voters to ensure the fault masking. This paper presents a comparative analysis of different Majority Voter designs in 7nm FinFET under radiation effects. The MUSCA SEP3 tool is used to estimate the SER of each circuit. Results show that NOR voter is less sensitive than the NAND voter. However, the SET pulse width is larger for the NOR voter than NAND voter.
This paper evaluates a set of complex cells with different transistor arrangements that implement the same logic function. These cells were evaluated under nominal conditions and with gate variability at layout level. The purpose is to verify what topology is more appropriate to increase the robustness of cells regarding the process variability issues. Results emphasize the importance of investigating the effects caused by process variability in FinFET technologies, as the electrical characteristics of circuits suffer significant changes. In general, the best choice is to use the network that the transistor in series is as far as possible to the output node. However, a trade-off needs to be done due to performance and power consumption penalties.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.