Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs

Chini, Alessandro; Soci, Fabio; Fantini, Fausto; Nanni, Antonio; Pantellini, A.; Lanzieri, C.; Meneghesso, G.; Zanoni, Enrico

doi:10.1016/j.microrel.2013.07.033

Cited by 9 publications

(2 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 3 shows the output power variation experienced during the 24 h stress test vs. the operating output power level. At first, it can be clearly seen when comparing devices from wafer A, B and D that the introduction of the field-plate both improves device reliability, lower output power variation, and device output power operating levels [6,7]. As an example, devices A0, i.e., from wafer A and FP0 structure, experienced a −0.55 dBm variation when operated at a 2.8 W·mm −1 while power variations and operating level were −0.3 dBm and 3.5 W·mm −1 for devices A1 and −0.05 dBm and 5.5 W·mm −1 for devices A2.…”

Section: Rf Stress Test Resultsmentioning

confidence: 99%

Reliability Investigation of GaN HEMTs for MMICs Applications

et al. 2014

View full text Add to dashboard Cite

Abstract:Results obtained during the evaluation of radio frequency (RF) reliability carried out on several devices fabricated with different epi-structure and field-plate geometries will be presented and discussed. Devices without a field-plate structure experienced a more severe degradation when compared to their counterparts while no significant correlation has been observed with respect of the different epi-structure tested. RF stress induced two main changes in the device electrical characteristics, i.e., an increase in drain current dispersion and a reduction in gate-leakage currents. Both of these phenomena can be explained by assuming a density increase of an acceptor trap located beneath the gate contact and in the device barrier layer. Numerical simulations carried out with the aim of supporting the proposed mechanism will also be presented.

show abstract

Section: Rf Stress Test Resultsmentioning

confidence: 99%

Reliability Investigation of GaN HEMTs for MMICs Applications

et al. 2014

View full text Add to dashboard Cite

show abstract

“…Field plates of a variety of types have been used in order to mitigate the field-crowding effect, which causes leakage current and device breakdown. A typical type of field plate is gate-connected field plate (GCFP), the * E-mail: kjcho12@etri.re.kr; Fax: +82-42-860-6248 field plate of which is connected to the gate and extends towards the drain side of the device [4][5][6]. This type of field plate alleviates the high electric field formed at the edge of the gate by reducing the peak electric field as demonstrated by simulation data [8,11].…”

Section: Introductionmentioning

confidence: 99%

Characteristics of a field plate connected to T-shaped gate in AlGaN/GaN HEMTs

Cho

Ahn

Kim

et al. 2015

Journal of the Korean Physical Society

View full text Add to dashboard Cite

An AlGaN/GaN high electron mobility transistor (HEMT) with a T-shaped gate employing a gate-foot-connected field plate is presented. Similar to other devices with gate connected field plates the device described in this paper is a variation of the Γ-shaped gate with the "head" of the Tshaped gate attached at the top. The proposed device has a higher breakdown voltage and a lower leakage current due to the attached field plate while maintaining the advantages of the T-shaped gate structure, which are a low gate resistance and a low noise level. In addition, the field plate deposition step during the fabrication process involves a partial covering of the "foot" of the gate which showed a possibility for a gate length reduction.

show abstract