Impact of failure criteria on the reliability prediction of CMOS devices with ultrathin gate oxides based on voltage ramp stress

Kerber, A.; Pompl, T.; Röhner, M.; Mosig, K.; Kerber, M.

doi:10.1109/led.2006.877710

Cited by 27 publications

(13 citation statements)

References 11 publications

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“…The acceleration factor of the residual time is basically identical to the factor determined for the time to formation of the breakdown path. Therefore, these experimental results confirm that progressive wear-out of the breakdown path can be described by the well known intrinsic acceleration behaviour of time to breakdown, which already has been concluded from ramped voltage tests with different ramp rates [14]. The long term stress tests were focused on NFET devices, which are more critical case as discussed later.…”

Section: Voltage Accelerationsupporting

confidence: 82%

“…Moreover, the data points of residual times were generated from different voltage combinations of pre-stress until breakdown formation and post-stress of residual time measurement. This demonstrates that progressive wear-out is independent on the stress history and it confirms that times to breakdown and residual times are independent of each other [14].…”

Section: Area Dependencesupporting

confidence: 62%

“…Long term package level tests confirm that voltage acceleration behaviour of the progressive wear-out is the same as observed for the time to initial formation of the breakdown path itself [10,14].…”

Section: Introductionsupporting

confidence: 60%

“…Therefore, the progressive increase in leakage current and the residual time do not scale with the oxide area [1,14]. Contrarily, the oxide degradation until the first percolation path being formed between anode and cathode is an area-dependent phenomenon and time to breakdown decreases with increasing active gate oxide area (e.g.…”

Section: Area Dependencementioning

confidence: 99%

“…Therefore, on a logarithmic time scale the postbreakdown leakage current characteristic appears like an instantaneous current increase. In order to measure the progressive wear-out, linear sampling using either long times to breakdown or a high time resolution of the test set-up [14] will be required. For PFET the situation is different.…”

Section: Post Breakdown Characteristicmentioning

confidence: 99%

See 4 more Smart Citations

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides

Pompl¹,

Kerber²,

Röhner³

et al. 2006

Microelectronics Reliability

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Section: Voltage Accelerationsupporting

confidence: 82%

Section: Area Dependencesupporting

confidence: 62%

Section: Introductionsupporting

confidence: 60%

Section: Area Dependencementioning

confidence: 99%

Section: Post Breakdown Characteristicmentioning

confidence: 99%

See 3 more Smart Citations

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides

Pompl¹,

Kerber²,

Röhner³

et al. 2006

Microelectronics Reliability

Self Cite

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Reliability screening of high-k dielectrics based on voltage ramp stress

Kerber¹,

Pantisano²,

Veloso³

et al. 2007

Microelectronics Reliability

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A strong analogy between the dielectric breakdown of high-K gate stacks and the progressive breakdown of ultrathin oxides

Tous

Miranda

et al. 2011

Journal of Applied Physics

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The breakdown of high-K (HK) stack gate dielectrics is shown to be analogous to the failure of ultrathin SiO2-based oxides showing progressive breakdown. The breakdown of a HK stack is shown to occur in two phases. First, one or several percolation paths are formed in the SiO2-based interfacial layer. Then, these partial breakdowns propagate into the HK through defect generation in this layer. This propagation phase is equivalent to the progressive breakdown local degradation phenomenon. As a consequence of this analogy, the reliability assessment tools developed for ultrathin single-layer oxides can also be used without significant changes to assess the reliability of HK stacks. This analogy is so strong that the experimental distinction between HK propagation and conventional progressive breakdown appears to be rather difficult. However, the residual time distribution from first breakdown to final oxide failure is shown to be significantly different for both processes at low failure percentiles. This has allowed us to obtain experimental evidence of HK propagation (as opposed to conventional progressive breakdown effects) in relatively thick Hf-based gate stacks where the detection of first BD appears to be feasible.

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Impact of failure criteria on the reliability prediction of CMOS devices with ultrathin gate oxides based on voltage ramp stress

Cited by 27 publications

References 11 publications

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides

Reliability screening of high-k dielectrics based on voltage ramp stress

A strong analogy between the dielectric breakdown of high-K gate stacks and the progressive breakdown of ultrathin oxides

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