Impact of defects on the carrier transport in GaN

Fehrer, M.; Einfeldt, S.; Birkle, U.; Gollnik, T; Hommel, D.

doi:10.1016/s0022-0248(98)00284-x

Cited by 38 publications

(33 citation statements)

References 11 publications

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“…Polycrystalline undoped Si, for example, exhibits high resistivity because of the potential barriers due to grain boundaries [10], and it is indispensable for various Si LSI processes. In the single crystalline GaN, Fehrer et al showed the existence of potential barriers similar to polycrystalline semiconductors [11]. Polycrystalline GaN showed c-oriented nature, and the AFM observation showed that it has many grain boundaries with 500 nm sized grains (Fig.…”

Section: Resultsmentioning

confidence: 99%

Ammonia Source MBE Growth of Polycrystalline GaN p-n Junction

Tampo

Yamada

Ohnishi

et al. 2001

phys. stat. sol. (a)

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We study the ammonia source molecular beam epitaxy growth of polycrystalline GaN on quartz glass substrates, and fabricate p–n diodes. Using an ammonia source, the grain size of polycrystalline GaN becomes larger than that of the ECR source growth and PL intensity is much stronger. Undoped polycrystalline GaN shows high resistivty. The n‐type and p‐type polycrystalline GaN layers are obtained by Si and Mg dopants, respectively. Carrier concentrations obtained are 2.2 × 10—17 to 8.8 × 10—17 cm—3 for n‐type layers and 7.1 × 10—17 cm—3 for p‐type layers. We fabricate polycrystalline GaN p–n junction and confirm the rectifying characteristics.

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Section: Resultsmentioning

confidence: 99%

Ammonia Source MBE Growth of Polycrystalline GaN p-n Junction

Tampo

Yamada

Ohnishi

et al. 2001

phys. stat. sol. (a)

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“…This microstructure has been usually described as an array of columnar crystallites slightly tilted and twisted to each other [5]. Thus, it is instructive to consider the models used to describe transport in polycrystalline material [6 to 8] as a potential framework to explain the above-mentioned peculiar phenomena in GaN [9,10].…”

Section: Introductionmentioning

confidence: 99%

“…These surface states act as efficient electron traps, and become charged, thus producing ªband bendingº, or potential barriers for electronic transport. This Grain Boundary Controlled Transport (GBCT) model was recently applied by Fehrer et al [10] to study a highly resistive GaN film. Potential barriers at grain boundaries can be conveniently modified by the photovoltaic effect.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Grain Boundaries on Electrical Conductivity in Thin GaN Layers

Salzman¹,

Uzan‐Saguy

Meyler

et al. 1999

phys. stat. sol. (a)

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“…On the other hand, it has also been reported that O makes a DX center above an Al content of 0.3 [11]. Oxygen is the most common residual impurity for Al x Ga 1--x N. Thus, it is possible that, besides depending on the crystal quality [12], the measured ionization energy ob- Doping limit of n-type Si-doped Al x Ga 1--x N Figure 4 shows the highest electron concentration obtained with various Al contents for our Si-doped Al x Ga 1--x N. It is clear that the highest obtainable electron concentration decreased sharply with increasing Al content. For x ¼ 1 (AlN), we obtained an electron concentration of 9.5 Â 10 16 cm --3 , which is about 50 times higher than the previously reported value of 2 Â 10 15 cm --3 [7].…”

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confidence: 99%

Intentional Control of n-type Conduction for Si-doped AlN and AlxGa1?xN with High Al Content

Taniyasu

Kasu

Kobayashi

2002

phys. stat. sol. (b)

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N‐type conductive Si‐doped AlN and AlxGa1—xN with high Al content have been obtained by intentionally controlling the Si dopant density [Si]. Self‐compensation plays an important role at higher [Si] and determines the upper doping limit of Si. The Si‐doped AlN showed n‐type conduction when [Si] was less than 3 × 1019 cm—3. When [Si] was more than 3 × 1019 cm—3, it became highly resistive due to the self‐compensation of Si donors. For x > 0.49, the ionization energy of Si donors increased sharply with increasing Al content. This resulted in a sharp decrease in the highest obtainable electron concentration with increasing Al content for the Si‐doped AlxGa1—xN.

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Impact of defects on the carrier transport in GaN

Cited by 38 publications

References 11 publications

Ammonia Source MBE Growth of Polycrystalline GaN p-n Junction

Ammonia Source MBE Growth of Polycrystalline GaN p-n Junction

The Effect of Grain Boundaries on Electrical Conductivity in Thin GaN Layers

Intentional Control of n-type Conduction for Si-doped AlN and AlxGa1?xN with High Al Content

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