The Effect of Grain Boundaries on Electrical Conductivity in Thin GaN Layers

Salzman, J.; Uzan‐Saguy, C.; Meyler, B.; Kalish, R.

doi:10.1002/(sici)1521-396x(199911)176:1<683::aid-pssa683>3.0.co;2-2

Cited by 11 publications

(5 citation statements)

References 16 publications

(10 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The value of grain boundary surface trap density (Q r ) should agree with the value of the surface state density of various systems having the same origin. Q r is well in agreement with reported values for both nitride and other polycrystalline systems [15,17,[18][19][20]. The values of Q r decrease with increasing grain size and match the experimental data as expected [15].…”

Section: Resultssupporting

confidence: 90%

Grain boundary related electrical transport in Al-rich Al x Ga1 − x N layers grown by metal-organic chemical vapor deposition

et al. 2011

View full text Add to dashboard Cite

Electrical transport data for Al rich AlGaN layers grown by metal-organic chemical vapor dep osition (MOCVD) are presented and analyzed in the temperature range 135-300 K. The temperature depen dence of electrical conductivity indicated that conductivity in the films was controlled by potential barriers caused by carrier depletion at grain boundaries in the material. The Seto's grain boundary model provided a complete framework for understanding of the conductivity behavior. Various electrical parameters of the present samples such as grain boundary potential, donor concentration, surface trap density, and Debye screening length were extracted.

show abstract

Section: Resultssupporting

confidence: 90%

Grain boundary related electrical transport in Al-rich Al x Ga1 − x N layers grown by metal-organic chemical vapor deposition

et al. 2011

View full text Add to dashboard Cite

show abstract

“…In order to explain different transport behavior in the present samples, we considered the grain boundary model [41,42]. Salzman et al [43,44] showed that the grain boundary model can be applicable to GaN epitaxial films like our case. As can be seen from Table 1, sample A and B have different GaN buffer thicknesses.…”

Section: Resultsmentioning

confidence: 99%

Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method

et al. 2009

View full text Add to dashboard Cite

The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga 1−x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T = 40 K and 185 K. Temperature-dependent conductivities of the bulk GaN layers are extracted from Hall measurements with implementing simple parallel conduction extraction method (SPCEM). It is observed that the resistivity (ρ) increases with decreasing carrier density in the insulating side of the metal-insulator transition for highly resistive GaN layers. Then the conduction mechanism of

show abstract

“…However, mass transportation among particles is often insufficient through sinter treatment, complete particle-particle fusion cannot be achieved within bulk materials, and particle boundaries remain. Owing to internal discontinuities, the properties of sintered inor-ganic bulks are not ideal (11,12), especially with respect to mechanical strength (13). In nature, biological organisms [e.g., sea urchins (14) and coccoliths (15)] can produce inorganic skeletons that have continuous structures with flexible morphology (16).…”

mentioning

confidence: 99%

Pressure-driven fusion of amorphous particles into integrated monoliths

Zhao

Kong

Jiang

et al. 2021

Science

View full text Add to dashboard Cite

Biological organisms can use amorphous precursors to produce inorganic skeletons with continuous structures through complete particle fusion. Synthesizing monoliths is much more difficult because sintering techniques can destroy continuity and limit mechanical strength. We manufactured inorganic monoliths of amorphous calcium carbonate by the fusion of particles while regulating structurally bound water and external pressure. Our monoliths are transparent, owing to their structural continuity, with a mechanical strength approaching that of single-crystal calcite. Dynamic water channels within the amorphous bulk are synergistically controlled by water content and applied pressure and promote mass transportation for particle fusion. Our strategy provides an alternative to traditional sintering methods that should be attractive for constructing monoliths of temperature-sensitive biominerals and biomaterials.

show abstract

The Effect of Grain Boundaries on Electrical Conductivity in Thin GaN Layers

Cited by 11 publications

References 16 publications

Grain boundary related electrical transport in Al-rich Al x Ga1 − x N layers grown by metal-organic chemical vapor deposition

Grain boundary related electrical transport in Al-rich Al x Ga1 − x N layers grown by metal-organic chemical vapor deposition

Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method

Pressure-driven fusion of amorphous particles into integrated monoliths

Contact Info

Product

Resources

About