Impact of crystal size and tunnel dielectric on semiconductor nanocrystal memory performance

She, Min; King, Tsu‐Jae

doi:10.1109/ted.2003.816525

Cited by 131 publications

(30 citation statements)

References 9 publications

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“…It is found that the NiSiGe NC device reveals better charge-storage ability than the NiSi NCs after 10 4 s. The better retention characteristic is because the NiSiGe NCs have lower quantum confinement effect due to the larger NC size distribution. 15 Also, it is confirmed the Ge elements of the NiSiGe film did not damage the tunneling oxide quality. 16 In conclusion, we demonstrate the NiSiGe NCs memory device formed by annealing the NiSiGe film.…”

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confidence: 77%

NiSiGe nanocrystals for nonvolatile memory devices

Chang

et al. 2009

Applied Physics Letters

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In this work, charge-storage characteristics of NiSiGe nanocrystal memory device have been studied. Transmission electron microscope shows that the annealed NiSiGe film has higher nanocrystal size and density distribution. Related material analyses such as x-ray photoelectron spectroscopy, Raman spectroscopy, and energy dispersive spectrometer were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystals aggregation during thermal process. With the improved nanocrystal formation process, a remarkable improvement of the memory effect is observed by comparing the NiSi and NiSiGe nanocrystals. In addition, the retention characteristics of the nanocrystals memory devices have been discussed.

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confidence: 77%

NiSiGe nanocrystals for nonvolatile memory devices

Chang

et al. 2009

Applied Physics Letters

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“…In the next section, we will show that NC size has a marked effect on memory performance as previously reported. 18,29) 3. Results and Discussion Figure 4 shows the transfer characteristics of sample A with various P/E biases for 0.1 s. For the fresh device, the threshold voltage is 1 V, the driving current capability is 236 mA/mm at jV GS À V TH j ¼ V DS ¼ 1 V, and on/off current ratio is larger than 10 7 .…”

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confidence: 99%

Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-k Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate

Luo

Tsui

et al. 2009

jjap

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In this study, a charge-trapping-layer-engineered nanoscale n-channel trigate TiN nanocrystal nonvolatile memory was successfully fabricated on silicon-on-insulator (SOI) wafer. An Al 2 O 3 high-k blocking dielectric layer and a P þ polycrystalline silicon gate electrode were used to obtain low operation voltage and suppress the backside injection effect, respectively. TiN nanocrystals were formed by annealing TiN/Al 2 O 3 nanolaminates deposited by an atomic layer deposition system. The memory characteristics of various samples with different TiN wetting layer thicknesses, post-deposition annealing times, and blocking oxide thicknesses were also investigated. The sample with a thicker wetting layer exhibited a much larger memory window than other samples owing to its larger nanocrystal size. Good retention with a mere 12% charge loss for up to 10 years and high endurance were also obtained. Furthermore, gate disturbance and read disturbance were measured with very small charge migrations after a 10 3 s stressing bias.

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“…10,11 Additionally, the device reliability can be improved, owing to the property of the dispersed Si-NCs defects and its deep energy level. [12][13][14][15][16] The JL-GAA SOncOS NVM was fabricated by initially growing a 40 nm-thick thermal oxide layer on 6 in. silicon wafers with a (100) orientation as substrates.…”

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confidence: 99%