Impact of Ballistic and Quasi-Ballistic Transport on Performances of Double-Gate MOSFET-Based Circuits

A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs

“…As the channel length is increased, the current decreases from this maximum value due to scattering effects. The transport makes a transition from the ballistic to quasi-ballistic or drift-diffusive regime with the longer channel lengths [9]. The carrier transport in the channel is considered to be ballistic when carriers travel from the source to the drain regions without encountering a scattering event.…”

Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation

“…Among these solutions, MOSFETs designed with Double-Gate (DGFET) configuration are very interesting for the nanometer scale, since they present a very good control of parasitic short channel effects (SCE) [5][6][7], no parasitic doping fluctuation effects due to the intrinsic nature of the film and increased carrier mobility and drain current [8]. Intrinsic films are also characterized by a high probability of ballistic transport in the channel [9][10][11][12][13], which could additionally reinforce the electrical performances of DGFET.…”

The Evolution of Theory on Drain Current Saturation Mechanism of MOSFETs from the Early Days to the Present Day

“…Here, we would like to highlight that both Lundstrom's 1997 theory and Natori's 1994 theory did not consider the series resistance (R sd ). Although the conduction band edge (E c ) profile in the n-channel will be the same with or without R sd (Martinie et al, 2008), the E c within S/D regions will be different when the effects of R sd is considered. If the effects of R sd are disregarded, E c within S/D regions will appear as a horizontal line, as illustrated in Fig.…”