Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation

Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation

“…This indicates that the bipolar amplification (Fig. 7b) is very low and that there is a strong recombination of the deposited charge in the device [10]. The bipolar gain is always higher in junctionless than in inversion-mode devices, but has similar dependences on ion hit location for the four structures.…”

“…The deposited charge, Q DEP, is also reported for comparison. Q DEP is highest in the middle of the channel and decreases toward the source and drain sides of the silicon film, because a reduced part of the ion track is contained in the active region [10]. Q COLL has a bell-shaped profile with a maximum at x=40 nm.…”

“…In this paper we investigate by 3-D numerical simulation the response to single-event of JL-DMDG through a detailed comparison with more usual inversion-mode (IM-DMDG [9], Fig. 1c single-material-gate devices (JL-SMDG [10] and IM-SMDG [11]). The impact of several technological parameters on single-event transients and bipolar amplification is also addressed.…”

3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs

“…This indicates that the bipolar amplification (Fig. 8b) is very low and that there is a strong recombination of the deposited charge in the device [28]. The bipolar gain (Fig.…”

“…The deposited charge is also reported for comparison. Q DEP is highest in the middle of the channel and decreases toward the source and drain sides of the silicon film, mainly because a reduced part of the ion track is contained in the active region [28]. Q COLL has a bell-shaped profile with a maximum around the middle of the channel (where Q DEP is the highest) and two minima at the source and drain contacts (where Q DEP is the lowest).…”