Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c -Plane and m -Plane ( In ,

R. Aleksiejūnas

¹

,

Kazimieras Nomeika

²

,

Oleg Kravcov

³

et al.

Abstract

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Impact of carrier diffusion on the internal quantum efficiency of InGaN quantum well structures

“…7(a) that the carrier diffusion coefficient increases with the QW thickness. This result supports the conclusion of our recent work, 30 where we demonstrated that carrier diffusion is enhanced in thicker layers due to compositional disorder, which facilitates the formation of percolative paths for easy carrier transport. 42 Larger D values in thicker QWs means that a positive correlation also exists between A and D , which is shown in Fig.…”

“…We remind that under given conditions the ambipolar diffusion coefficient is roughly twice the diffusion coefficient of holes. 30 To increase the reliability of results, we also used the spectrally integrated DT decays to independently calculate τ .…”

Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy

“…Determining the distance that the electron emission intensity drops by e -1 ≈ 0.37 from the peak electron emission intensity at the edge of V-defects gives us a good estimate of the lateral diffusion length of injected carriers. We estimate La to be ~ 30 -300 nm across various V-defects, which matches well with the ~ 320 nm ambipolar diffusion length measured for In0.08Ga0.92N [72] and the ~ 345 -370 nm ambipolar diffusion length measured for In0.13Ga0.87N [73], where the higher In content of the green QWs in the measured EEM sample may explain the lower values.…”

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using (In,Ga)N Alloy Quantum Barriers

“…The spatially varying energy landscape at nanometer-length scales will modify the electrical and optical properties. As a result, alloy disorder strongly impacts carrier localization and transport in light-emitting diode (LED) devices [1][2][3][4][5]. These effects become more pronounced for green discontinuity at the QW/QB interface and will also contribute an additional source of alloy disorder to the active region.…”