Impact of carrier diffusion on the internal quantum efficiency of InGaN quantum well structures

Abstract

Internal quantum efficiency (IQE) is studied in a large set of polar and non-polar InGaN/GaN quantum well structures, 57 samples in total. In search for universal factors limiting IQE, the...

Theoretical and Experimental Studies on Material Gain for Wide Polar InGaN Quantum Well‐Mechanism Leading to Electric Field Screening and Lasing

“…Table 1 also lists the parameters A, B, and C reported by other authors. [43,[45][46][47][48]50,66,67,[69][70][71][72]74] In general, the parameters A and B reported in the literature are of the order of 10 7 s −1 and 10 −11 cm 3 s −1 , respectively. [46,67,69] The parameter C found in the literature varies in the range of ≈10 −34 -10 −30 cm 6 s −1 .…”

“…#1 1.52 3.50 2, [ 50,67] 1, [48] 37, [46] 7, [50] 10, [ 45,48] 100, [ 50,67] 20, [48] 2.6, [46] #2 0.10 3.34 5.4, [69] 0.07-500, [70] 2, [ 69,71] 0.2-30, [70] 2, [68] 0.001, [72] 0.1, 40, [70] #3 1.54 3.80 0.26, [47] 5.4 [71] 0.3 [47] ∼1, [47] 20, [71] 5 [73] Figure negative)-left panel; current is flowing and the material gain becomes positive-middle panel; and current is flowing and a high gain is observed-right panel. The carrier distribution and the wavefunctions are plotted for the first three electron (heavy hole) levels.…”

“…[ 46,67,69 ] The parameter C found in the literature varies in the range of ≈10 −34 –10 −30 cm 6 s −1 . [ 67,70,71 ] An even higher value of this coefficient, 10 −29 cm 6 s −1 , can be found in a model that assumes the existence of additional factors with an expression for current density. [ 45 ] The problem with the estimation of parameter C was raised also by Piprek et al.…”