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We have found a method for a diameter-selective removal of metallic single-walled carbon nanotubes (m-SWCNTs) from semiconducting (s-) ones by stirring or sonicating SWCNT powder in tetramethylene sulfone (TMS)/chloroform solution with nitronium hexafluoroantimonate (NO2SbF6: NHFA) and nitronium tetrafluoroborate (NO2BF4: NTFB). Positively charged nitronium ions (NO2+) were intercalated into nanotube bundles, where the intercalation was promoted also by the counterions. Nitronium ions selectively attacked the sidewall of the m-SWCNTs due to the abundant presence of electron density at the Fermi level, thus yielding stronger binding energy as compared to the counterpart s-SWCNTs. The s-SWCNTs were left on the filter after filtration, whereas the m-SWCNTs were disintegrated and drained away as amorphous carbons. The effectiveness of removing m-SWCNTs was confirmed by the resonant Raman spectra and absorption spectra.

Position‐configurable, vertical, single‐crystalline ZnO nanorod arrays are fabricated via a polymer‐templated hydrothermal growth method at a low temperature of 93 °C. A sol‐gel processed dense c‐oriented ZnO seed layer film is employed to grow nanorods along the c‐axis direction [0001] regardless of any substrate crystal mismatches. Here, one‐beam laser‐interference lithography is utilized to fabricate nanoscale holes over an entire 2‐in. wafer during the preparation of the polymer template. As such, vertically aligned ZnO nanorods can be grown from the seed layer exposed at the bottom of each hole. Furthermore, morphological transformations of the ZnO nanorods into pencil‐like, needle‐like, tubular, tree‐like, and spherical shapes are obtained by controlling the growth conditions and utilizing the structural polarity of the ZnO nanorods.

Despite the availability of large-area graphene synthesized by chemical vapor deposition (CVD), the control of a uniform monolayer graphene remained challenging. Here, we report a method of acquiring monolayer graphene by laser irradiation. The accumulation of heat on graphene by absorbing light, followed by oxidative burning of upper graphene layers, which strongly relies on the wavelength of light and optical parameters of the substrate, was in situ measured by the G-band shift in Raman spectroscopy. The substrate plays a crucial role as a heat sink for the bottom monolayer graphene, resulting in no burning or etching. Oscillatory thinning behavior dependent on the substrate oxide thickness was evaluated by adopting a simple Fresnel's equation. This paves the way for future research in utilizing monolayer graphene for high-speed electronic devices.