Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below

Fenouillet-Béranger, C.; Perreau, P.; Denorme, S.; Tosti, L.; Andrieu, F.; Weber, O.; Barnola, S.; Arvet, C.; Campidelli, Y.; Haendler, S.; Beneyton, R.; Perrot, C.; Buttet, C. de; Pham-Nguyen, Loan; Leverd, F.; Gouraud, P.; Abbate, F.; Baron, F. A.; Torres, A.; Laviron, C.; Pinzelli, L.; Vetier, J.; Borowiak, C.; Margain, A.; Delprat, D.; Boedt, F.; Bourdelle, K.K.; Nguyen, B.-Y.; Faynot, O.; Skotnicki, T.

doi:10.1109/esscirc.2009.5325994

Cited by 24 publications

(17 citation statements)

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“…In this paper, tested devices are FDSOI nMOS transistors with body contacts. This technology is developed at CEA/LETI-Minatec and is optimized for the 20 nm node [23]. The SOI active layer is 8-nm thick and the gate length varies from 10 m down to 30 nm.…”

Section: Fully Depleted Soi Technologymentioning

confidence: 99%

Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments

Gaillardin

Girard

Paillet

et al. 2013

IEEE Trans. Nucl. Sci.

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Section: Fully Depleted Soi Technologymentioning

confidence: 99%

Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments

Gaillardin

Girard

Paillet

et al. 2013

IEEE Trans. Nucl. Sci.

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“…The Fully Depleted (FD) SOI MOSFET with Ultra Thin Buried Oxide (UTBOX) is considered as one of the best candidates for the sub 32nm technology nodes due to the better short channel effect maintaining the well known planar structure (1).…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Silicon Film Thickness and the Ground Plane Influence on Ultra Thin Buried Oxide SOI nMOSFETs

et al. 2012

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This paper presents an analysis of the Ground Plane (GP) implantation and silicon film thickness influences on Ultra Thin Buried Oxide (UTBOX) SOI MOSFETs. The results obtained experimentally and by simulations, considering the GP implantation, show that the device must have a GP implantation higher than 1x10 18 cm -3 in order to eliminate the substrate effect. In spite of the fact that the substrate influence on the drain current is negligible with a high GP concentration, the coupling between front and back interface increases for thinner silicon films.

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“…This is the reason why, this method has been extensively used by different groups worldwide [17][18][19][20][21]. This code has been calibrated by comparing to experimental data obtained from [22] and with MS deterministic simulators as shown in [23]. In the same way it has demonstrated its capabilities studying different advanced bulk and SOI planar nanodevices [24][25][26][27].…”

Section: Simulation Methodologymentioning

confidence: 99%

Impact of non uniform strain configuration on transport properties for FD14+ devices

Medina-Bailón

Sampedro

Gamiz

et al. 2016

Solid-State Electronics

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As device dimensions are scaled down, the use of non-geometrical performance boosters becomes of special relevance. In this sense, strained channels are proposed for the 14 nm FDSOI node.However this option may introduce a new source of variability since strain distribution inside the channel is not uniform at such scales. In this work, a MS-EMC study of different strain configurations including non-uniformities is presented showing drain current degradation because of the increase of intervalley phonon scattering and the subsequent variations of transport effective mass and drift velocity. This effect, which has an intrinsic statistical origin, will make necessary further optimizations to keep the expected boosting capabilities of strained channels.

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Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below

Cited by 24 publications

References 0 publications

Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments

Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments

Analysis of the Silicon Film Thickness and the Ground Plane Influence on Ultra Thin Buried Oxide SOI nMOSFETs

Impact of non uniform strain configuration on transport properties for FD14+ devices

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