Impact ionization luminescence of InGaN/AlGaN/GaN p-n-heterostructures

Kovalev, A. N.; Manyakhin, F. I.; Kudryashov, V. E.; Turkin, A. N.; Yunovich, A. E.

doi:10.1134/1.1187358

Cited by 12 publications

(7 citation statements)

References 9 publications

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“…The temperature of the LED's active area was estimated from the spectra at 80 mA to be T = 360-370 K [12]. Estimations of changes of the LED characteristics were carried out while increasing the constant current over the range J=10-100 mA.…”

Section: Methodsmentioning

confidence: 99%

“…The goal of the present work was a research of aging processes in LED's for which luminescence and electrical properties were investigated in [6] [7] [8] [9] [10]. Preliminary results of this study were published in references [11] [12]. The experiments were done at moderately high currents, not far from the normal LED operating conditions.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents

Manyakhin

Kovalev

Yunovich

1998

MRS Internet j. nitride semicond. res.

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Changes of luminescence spectra and electrical properties of light-emitting diodes (LED's) based on InGaN/AlGaN/GaN heterostructures were investigated over a long period of operation. Blue and green LED's with InGaN single quantum wells were studied at currents up to 80 mA for 10 2 -2.10 3 hours. An increase of luminescence intensity at operating currents of 15 mA was detected at the 1st stage of aging (100-800 hours) and a slow fall was detected in the 2nd stage. Greater changes of spectra were observed at low currents (< 0.15 mA). A study of charged acceptor distribution in the space charge region has shown that at the 1st stage their concentration grows, and in the 2nd stage, it falls. The models for the two stages are proposed: 1) activation of Mg due to destruction of residual Mg-H complexes; 2) formation of donor vacancies N. A model of defect formation by hot electrons injected into the quantum well is discussed.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents

Manyakhin

Kovalev

Yunovich

1998

MRS Internet j. nitride semicond. res.

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“…Modern LEDs with the external quantum effi ciency η ≈ 40-50% [5], and also LEDs manufactured 20 years ago with low quantum efficiencies η ≈ 10% [6], exhibit, together with the conventional course of the aging process, phenomena that have not as yet been accounted for. The conventional aging process is characterized by a steady decrease in η with time.…”

Section: Introductionmentioning

confidence: 99%

Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs

et al. 2012

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Study of the spectral noise density and its dependence on current density in as fabricated and degraded blue light emitting diodes (LEDs) based on InGaN/GaN quantum well structures are reported. It is shown that defects are generated nonuniformly in the course of degradation, being concentrated along extended defects penetrating into the active region of LEDs. It is demonstrated that the decrease in the exter nal quantum efficiency in the course of aging is due to the enhancement of charge transport uniformity, which leads to the formation of shunts and local overheating regions. Typically, in blue LEDs, these effects are responsible for the ambiguous development of the degradation process, which hinders prognostication of LED service life. The effect of noise suppression is observed in a narrow current density range (10 -2 to 10 -1 A cm -2 ) corresponding to the onset of radiative recombination.

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“…In contrast to other groups, this study observes the reverse-bias electroluminescence, which was almost undetectable from the fresh device, since the luminescence behavior of the device in the reverse-bias condition could also shed light on fresh device-reliability problems. During the reverse-bias operations, field-dependent tunneling current at low voltage and local impact ionization in high-electric-field regions dominate the leakage current, which affects the device's electrical properties [3]. The goal of this study is to use optical characterization techniques, including 2D electroluminescence observation, 2D surface temperature measurements, 2D X-ray fluorescence (XRF) element analysis, and electrical measurements to explore potential reliability problems with the InGaN LED device performance.…”

Section: Introductionmentioning

confidence: 99%