Impact ionization in silicon: A review and update

Maes, Wouter; Meyer, K. De; Overstraeten, R. Van

doi:10.1016/0038-1101(90)90183-f

Cited by 202 publications

(96 citation statements)

References 76 publications

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“…The two experimental studies were similar, but more advanced, than the original work reported in 1957 [1]. The data in [8] is for diode depletion region widths down to 100 nm, while [9] extends the measurements to diode depletion region widths as small as 30 nm.…”

Section: Introductionsupporting

confidence: 62%

“…The reverse breakdown characteristics of silicon pn junctions have been investigated intensively over many years [1]. However, even today, the low-voltage breakdown phenomenon of mixed field emission and impact ionization has not been fully understood, or the low-voltage reverse breakdown current analyzed in terms of the two different physical mechanisms [2].…”

Section: Introductionmentioning

confidence: 99%

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Novel electroluminescence technique to analyze mixed reverse breakdown phenomena in silicon diodes

Plessis

Rademeyer²

2010

Solid-State Electronics

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a b s t r a c tIn this paper a novel technique to analyze the low-voltage breakdown regime of silicon diodes is presented. It is shown that the field emission tunnel current component of the reverse current does not cause energy transitions of carriers, and therefore will not emit photons. All photons being emitted from the pn junction are due to avalanche electroluminescence as a result of hot carrier energy relaxation processes. Measuring the light intensity output as a function of reverse current, the two current components (field emission and impact ionization) can be extracted as a function of reverse voltage. The experimental results were verified using the differential dynamic impedance method, as well as fitting a theoretical model to the extracted tunnel current. The temperature coefficient of current also indicated the transition from tunneling to avalanche.

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Section: Introductionsupporting

confidence: 62%

Section: Introductionmentioning

confidence: 99%

Novel electroluminescence technique to analyze mixed reverse breakdown phenomena in silicon diodes

Plessis

Rademeyer²

2010

Solid-State Electronics

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“…In WF2 four models of the impact ionisation rate are implemented; two of them, the van Overstraeten [26] and Massey [27] models, are based on the Chynoweth law [26] while the other two, the Bologna [28] and the Okuto -Crowell [29] models propose their own law for α e,h . All models, except for Massey, are also implemented in Synopsis Sentaurus [25], where complete references can be found.…”

Section: -Dimensional Tracking With Ultra-fast Silicon Detectors 24mentioning

confidence: 99%

“…In high electric fields the moving charges gain sufficient energy that they can initiate ionization, and build up an avalanche over a distance x such that the number of electrons (N e ) and holes (N h ) grow exponentially (for a detailed review see for example [25] and [26]):…”

mentioning

confidence: 99%

4D tracking with ultra-fast silicon detectors

2017

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The evolution of particle detectors has always pushed the technological limit in order to provide enabling technologies to researchers in all fields of science. One archetypal example is the evolution of silicon detectors, from a system with a few channels 30 years ago, to the tens of millions of independent pixels currently used to track charged particles in all major particle physics experiments. Nowadays, silicon detectors are ubiquitous not only in research laboratories but in almost every high-tech apparatus, from portable phones to hospitals. In this contribution, we present a new direction in the evolution of silicon detectors for charge particle tracking, namely the inclusion of very accurate timing information. This enhancement of the present silicon detector paradigm is enabled by the inclusion of controlled low gain in the detector response, therefore increasing the detector output signal sufficiently to make timing measurement possible. After providing a short overview of the advantage of this new technology, we present the necessary conditions that need to be met for both sensor and readout electronics in order to achieve 4D tracking. In the last section, we present the experimental results, demonstrating the validity of our research path.

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“…The Keld ish solution attracted the attention because it tends to the Wolff relation (exp[-C/ζ 2 ]) at high fields and tends to a simp le exponential exp[-C'/|ζ|] (where C' is another constant) at moderate fields, which coincides with the experiment. In fact, the measurements of Chynoweth [74], Lee et al [77], Van Overstraten and Deman [78], Kotani and Kawazu [79], Maes [80] and Takayangi [81] showed that the impact ionization rate at moderate fields fo llo w a simp le exponential function. According to Grant's model [82], the electron impact ionization rate fo llo ws the following exponential relation:…”

Section: Impact Ionizati On Ratementioning

confidence: 99%

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

El-Saba¹

2013

MSSE

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In this paper we present a complete hydrodynamic model (HDM) describing the transport of charge carriers in semiconductor devices with arbitrary band structure. The model is appended with advanced physical models fo r almost all the physical parameters of interest in modern Si Devices. These parameters are inter-related v ia the carrier energy relaxation time. An improved analytical model of the carrier heat flu x, on the basis of a fourth mo ment of the Bolt zmann transport equation (BTE), is also presented. In order to resolve the heat evacuation problems in SOI and power devices, the model is coupled with a lattice heat conservation equation. The transport of hot carriers is simu lated, according to the proposed HDM and the results are compared with the conventional data obtained using the drift-diffusion model (DDM) and MC simu lation. We show from the HD simu lation, the effect of the energy relaxat ion time value on the hot carrier transport in general and the breakdown voltage in particu lar, of both MOSFETs and bipolar devices.

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Impact ionization in silicon: A review and update

Cited by 202 publications

References 76 publications

Novel electroluminescence technique to analyze mixed reverse breakdown phenomena in silicon diodes

Novel electroluminescence technique to analyze mixed reverse breakdown phenomena in silicon diodes

4D tracking with ultra-fast silicon detectors

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

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