Imaging properties of a leading-edge DUV laser generated photomask

Jackson, Curt; Buck, Peter; Cohen, Sarah; Garg, Vishal; Hickethier, Jason; Howard, Charles H.; Kiefer, Robert; Lamantia, Matt J.; Manfredo, John; Tsou, James

doi:10.1117/12.557720

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…Contact images on mask reveal sharper corners generated by EBM versus ALTA system. For HL800, 50keV e-beam system, corner acuity appears worse than ALTA4700 AIMS simulation result shows corner rounding leads to intensity offset for different masks [3] Corner rounding reduces overall contact area resulting in reduced light transmission through photomask. In many cases, slight transmission variations may be compensated for by adjusting stepper dose.…”

Section: Resultsmentioning

confidence: 74%

Aerial imaging performance of ALTA4700 printed mask for 130nm design rule

Hsu¹,

Wu²,

Cheng³

2007

23rd European Mask and Lithography Conference

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Photomask plays a key role in optical lithography. Laser pattern generators are widely used for photomask manufacturing due to their high throughput. However, corner rounding and line-end shortening degrade pattern fidelity resulting in distorted pattern image s on wafer. ALTA 4700 incorporates a new 0.9 NA, 42X reduction lens that significantly improves resolution and pattern accuracy performance.In this study, three critical line/space 130nm technology device patterns are printed by ALTA4700 laser pattern generator.Input data for these layers was based on existing OPC model generated for e-beam pattern generator. ALTA4700 printed masks have the same aerial image performance compare with e-beam pattern generator.

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Section: Resultsmentioning

confidence: 74%

Aerial imaging performance of ALTA4700 printed mask for 130nm design rule

Hsu¹,

Wu²,

Cheng³

2007

23rd European Mask and Lithography Conference

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“…For this application, 2 nd level patterning is difficult with i-line laser tools. Significant improvements in process margin can be realized by using a DUV laser tool 7 . We have been evaluating the capability of a DUV Sigma7300 to perform 2 nd level Alt-PSM mask patterning.…”

Section: Introductionmentioning

confidence: 99%

Second level exposure for phase shift mask applications using an SLM-based DUV mask writer

et al. 2005

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Phase shift mask (PSM) applications are becoming essential for addressing the lithography requirements of the 65 nm technology node and beyond. Many mask writer properties must be under control to expose the second level of advanced PSM: second level alignment system accuracy, resolution, pattern fidelity, critical dimension (CD) uniformity and registration. Optical mask writers have the advantage of process simplicity for this application, as they do not require a discharge layer. This paper discusses how the mask writer properties affect the error budget for printing the second level. A deep ultraviolet (DUV) mask writer with a spatial light modulator (SLM) is used in the experimental part of the paper. Partially coherent imaging optics at the 248 nm wavelength provide improved resolution over previous systems, and pattern fidelity is optimized by a real-time corner enhancement function. Lithographic performance is compared to the requirements for second level exposure of advanced PSM. The results indicate sufficient capability and stability for 2 nd level alternating PSM patterning at the 65 nm and 45 nm nodes.

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Imaging properties of a leading-edge DUV laser generated photomask

Cited by 2 publications

References 3 publications

Aerial imaging performance of ALTA4700 printed mask for 130nm design rule

Aerial imaging performance of ALTA4700 printed mask for 130nm design rule

Second level exposure for phase shift mask applications using an SLM-based DUV mask writer

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