2011
DOI: 10.1103/physrevlett.106.087202
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Imaging and Control of Surface Magnetization Domains in a Magnetoelectric Antiferromagnet

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Cited by 103 publications
(132 citation statements)
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References 29 publications
(47 reference statements)
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“…This boundary polarization, roughness insensitive, has been demonstrated to contribute to the magnetization. 27,28 Accordingly, the hysteresis loops included in Fig. 4 can be associated with these two main contributions; one responsible for the large magnetization values due to the ferrimagnetic (FiM) magnetite nanoparticles, which superimposes the antiferromagnetic contribution responsible for the subtle slope and almost non-saturation of the magnetization at high field values that corresponds to the chromium oxide magnetic phase identified.…”
Section: View Article Onlinementioning
confidence: 99%
“…This boundary polarization, roughness insensitive, has been demonstrated to contribute to the magnetization. 27,28 Accordingly, the hysteresis loops included in Fig. 4 can be associated with these two main contributions; one responsible for the large magnetization values due to the ferrimagnetic (FiM) magnetite nanoparticles, which superimposes the antiferromagnetic contribution responsible for the subtle slope and almost non-saturation of the magnetization at high field values that corresponds to the chromium oxide magnetic phase identified.…”
Section: View Article Onlinementioning
confidence: 99%
“…ME devices encode information in remnant and, thus, nonvolatile magnetization states providing additional functionality over CMOS counterparts. In ME devices, voltage-controlled nonlinear switching of boundary magnetization, a generic property of ME antiferromagnets [14][15][16], is mapped onto voltage-controlled switching between remnant magnetization of an adjacent ferromagnetic (FM) thin film through quantum-mechanical exchange at the AFM/FM interface. It gives rise to voltagecontrolled exchange bias [15,17,18] enabling, e.g., ultralow-power ME magnetic random-access memory, majority gates, and other ME variations of memory and logic device applications [4,5].…”
mentioning
confidence: 99%
“…Here we include the data on the atomic relaxations at the Cr 2 O 3 (0001) surface and provide a justification for model (3) and (4). Table IV 6,12,16 Although there are notable deviations from the LEED data, 6 we need to remember that the latter correspond to the actual surface termination but were fitted assuming the A (1 × 1) model.…”
Section: Appendix A: Surface Relaxationsmentioning
confidence: 99%
“…On the other hand, the equilibrium magnetization of the Cr 2 O 3 (0001) surface enables interesting spintronic applications. [1][2][3][4] For these reasons it is interesting to consider the magnetic properties of the Cr 2 O 3 (0001) surface at finite temperatures.…”
Section: Surface Magnetismmentioning
confidence: 99%
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