“…ME devices encode information in remnant and, thus, nonvolatile magnetization states providing additional functionality over CMOS counterparts. In ME devices, voltage-controlled nonlinear switching of boundary magnetization, a generic property of ME antiferromagnets [14][15][16], is mapped onto voltage-controlled switching between remnant magnetization of an adjacent ferromagnetic (FM) thin film through quantum-mechanical exchange at the AFM/FM interface. It gives rise to voltagecontrolled exchange bias [15,17,18] enabling, e.g., ultralow-power ME magnetic random-access memory, majority gates, and other ME variations of memory and logic device applications [4,5].…”