Dispersion of Electric-Field-Induced Faraday Effect in Magnetoelectric<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>Cr</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Wang, Junlei; Binek, Christian

doi:10.1103/physrevapplied.5.031001

Cited by 8 publications

(5 citation statements)

References 30 publications

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“…The Z Fe values and cell parameters (including c/a ratio) systematically decreased on increasing the Cr content in the system. This is consistent to the substitution of Fe 3+ ions with larger ionic radius (0.645 Å) by Cr 3+ ions with smaller ionic radius (0.615 Å) [6,[14][15]. The c/a ratio lie in the range of Ga doped α-Fe 2 O 3 system [16].…”

Section: Structural Propertiessupporting

confidence: 74%

Tuning of structural phase, magnetic spin order and electrical conductivity in mechanical alloyed material of α-Fe2O3 and α-Cr2O3 oxides

Bhowmik

Siva

Reddy

et al. 2020

Journal of Magnetism and Magnetic Materials

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Section: Structural Propertiessupporting

confidence: 74%

Tuning of structural phase, magnetic spin order and electrical conductivity in mechanical alloyed material of α-Fe2O3 and α-Cr2O3 oxides

Bhowmik

Siva

Reddy

et al. 2020

Journal of Magnetism and Magnetic Materials

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“…We estimate the upper limit of a potential electric field to be around 47 V/mm, based on a "stress-test" scenario where 1% of the charge carriers have leaked through the insulating barrier, assuming a charge carrier density of 2.6 · 10 10 cm −2 [47]. This estimate is considerably weaker than the requirements for influencing typical magnetic insulators [62,72,73]. In comparison to the critical temperature above, a recent experiment studying double bilayer graphene in the quantum Hall regime found the Coulomb-mediated exciton condensation to have an activation energy of ∼ 8 K [52], which was ten times higher than what was found in an experiment using GaAs [74].…”

mentioning

confidence: 97%

“…A possible emergence of a strong electric field across the barrier could in principle alter the magnetic properties in e.g. Cr 2 O 3 [62,72] and NiO [73]. We estimate the upper limit of a potential electric field to be around 47 V/mm, based on a "stress-test" scenario where 1% of the charge carriers have leaked through the insulating barrier, assuming a charge carrier density of 2.6 · 10 10 cm −2 [47].…”

mentioning

confidence: 99%

Magnon-Mediated Indirect Exciton Condensation through Antiferromagnetic Insulators

et al. 2019

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Electrons and holes residing on the opposing sides of an insulating barrier and experiencing an attractive Coulomb interaction can spontaneously form a coherent state known as an indirect exciton condensate. We study a trilayer system where the barrier is an antiferromagnetic insulator. The electrons and holes here additionally interact via interfacial coupling to the antiferromagnetic magnons. We show that by employing magnetically uncompensated interfaces, we can design the magnon-mediated interaction to be attractive or repulsive by varying the thickness of the antiferromagnetic insulator by a single atomic layer. We derive an analytical expression for the critical temperature T c of the indirect exciton condensation. Within our model, anisotropy is found to be crucial for achieving a finite T c , which increases with the strength of the exchange interaction in the antiferromagnetic bulk. For realistic material parameters, we estimate T c to be around 7 K, the same order of magnitude as the current experimentally achievable exciton condensation where the attraction is solely due to the Coulomb interaction. The magnon-mediated interaction is expected to cooperate with the Coulomb interaction for condensation of indirect excitons, thereby providing a means to significantly increase the exciton condensation temperature range.Introduction.-Interactions between fermions result in exotic states of matter. Superconductivity is a prime example, where the negatively charged electrons can have an overall attractive coupling mediated by individual couplings to the vibrations, known as phonons, of the positively charged lattice. In addition to charge, the electron also has a spin degree of freedom. The electron spin can interact with localized magnetic moments through an exchange interaction exciting the magnetic moment by transfer of angular momentum. These excitations are quasiparticles known as magnons. Theoretical predictions of electron-magnon interactions have shown that these can also induce effects such as superconductivity [1][2][3][4][5][6][7][8][9][10].Research interest in antiferromagnetic materials is surging [11,12]. This enthusiasm is due to the promising properties of antiferromagnets such as high resonance frequencies in the THz regime and a vanishing net magnetic moment. Much of this research focuses on interactions involving magnons or spin waves at magnetic interfaces in hybrid structures. Examples of this are spin pumping [13-19], spin transfer [15, 20-22], and spin Hall magnetoresistance [23-28] at normal metal interfaces, and magnon-mediated superconductivity [9,10]. Recently, an experiment has also demonstrated spin transport in an antiferromagnetic insulator over distances up to 80 µm [29]. Moreover, antiferromagnetic materials are also of interest since it is believed that high-temperature superconductivity in cuprates is intricately linked to magnetic fluctuations near an antiferromagnetic Mott insulating phase [30,31]. Thus it is crucial to achieve a good understanding of antiferromagnetic magn...

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“…Thus far, electrical manipulation of antiferromagnetic spin in Cr 2 O 3 /FM exchange bias systems has been extensively investigated, for future storage/memory/logic applications . This research has developed detection techniques which access the 180° difference in the antiferromagnetic spin . However, an isothermal, practical 180° control of antiferromagnetic spin in Cr 2 O 3 is still uneasy .…”

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confidence: 99%

Manipulation of Antiferromagnetic Spin Using Tunable Parasitic Magnetization in Magnetoelectric Antiferromagnet

Nozaki

Al‐Mahdawi

Shiokawa

et al. 2018

Physica Rapid Research Ltrs

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Antiferromagnets and ferrimagnets with a low net magnetic moment are key components for future spintronic devices because they enable high-integration and high-speed (on the order of THz) operations. Cr 2 O 3 is one of the few antiferromagnets that can achieve 180 manipulation of its spin by electrical means. In this study, the authors developed a new functional material, Cr 2 O 3 , with tunable parasitic magnetization. The authors demonstrate both magnitude and direction tunability of parasitic magnetization in Cr 2 O 3 thin films by doping. A sublattice magnetization reduction and displacement-induced nonequivalent Cr moments by site-selective substitution of nonmagnetic elements are inferred to be the origin of the parasitic magnetization. By utilizing the tunable parasitic magnetization, the authors demonstrate the manipulation of antiferromagnetic single domain. In addition, the authors confirm the low-electric-field switching ability of the antiferromagnetic spin in a doped Cr 2 O 3 /Co exchange coupling system. Such tunable parasitic magnetization enables easy manipulation and detection of antiferromagnetic spin and provides a platform for further understanding of antiferromagnets and research opportunities in innovative spintronics device applications.For a decade, ferromagnetic materials have played a prominent role in the development of spintronics. Ferromagnet (FM)based spintronics have resulted in unique high-performance devices, such as magnetoresistive random-access memory (MRAM). [1] However, specific problems, such as magnetic interferences, are a considerable barrier to further integration of these devices, restricting their future development. One way to overcome such problems is to utilize antiferromagnets (AFMs) or ferrimagnets with low net magnetic moments instead of FMs. As stated by N eel, [2] the high potential of AFMs has been recognized for a long time; AFMs do not generate stray fields, are stable in the presence of an external magnetic field, and have THz precession frequency, which enable the realization of high-integration and ultra-high-speed operation devices. Although the difficulty in conventional manipulation and detection of antiferromagnetic spin restricts its spintronics applications, these processes have increasingly become more feasible due to recent progress. [3][4][5] In particular, 90 control (uniaxial anisotropy control) of antiferromagnetic spin become more feasible. 90 manipulations of the antiferromagnetic spin using an electric current were demonstrated for FeRh through current-induced Joule heating, [6,7] and CuMnAs through spin-orbit torque. [8,9] The corresponding detection techniques, such as anisotropic magnetoresistance (AMR), [8,10,11] tunnel anisotropic magnetoresistance (TAMR), [12] and spin Hall magnetoresistance (SMR) of AFM, [13] which can detect 90 difference in antiferromagnetic spin has also been developed. In contrast, 180 control (unidirectional anisotropy control) of antiferromagnetic spins has been rarely demonstrated, while it enable higher perfo...

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Dispersion of Electric-Field-Induced Faraday Effect in MagnetoelectricCr2O3

Cited by 8 publications

References 30 publications

Tuning of structural phase, magnetic spin order and electrical conductivity in mechanical alloyed material of α-Fe2O3 and α-Cr2O3 oxides

Tuning of structural phase, magnetic spin order and electrical conductivity in mechanical alloyed material of α-Fe2O3 and α-Cr2O3 oxides

Magnon-Mediated Indirect Exciton Condensation through Antiferromagnetic Insulators

Manipulation of Antiferromagnetic Spin Using Tunable Parasitic Magnetization in Magnetoelectric Antiferromagnet

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