III-V Device Technologies for Electronic Applications

Shah, N.J.; Pei, S. S.

doi:10.1002/j.1538-7305.1989.tb00643.x

Cited by 9 publications

(3 citation statements)

References 8 publications

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“…The presenceofhigh densities ofdecorated dislocations in a polished GaAs wafer influences the manufacture ofMES-FETs by allowing electrically active defects to reside within the ion-implanted channel region ofa transistor. 6 These effects havebeen quantified by spatially registeringthe SRPL frame to a MESFET, as shown Figure 1. Defects within the gate region appear to reduce radiofrequency (RF) transconductance."…”

Section: Applications In Compound Semiconductorsmentioning

confidence: 99%

Non-Destructive Optical Techniques for Characterizing Semiconductor Materials and Devices

Carver

Gray²,

Levkoff

et al. 1994

At&T Technical Journal

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In the information age, communications technology depends on the efficient manufacture ofphotonic and electronic devices. Optical testing promotes manufacturing efficiency by controlling the quality ofincoming materials, providing rapid feedback for process improvements, and analyzing why a product has failed. New, non-destructive optical techniques are being used to measure keyproperties ofsemiconductor materials and devices. Optical mapping reveals defective regions invarious types ofwafers, as well as in semiconductor-based lasersand detectors used inAT&T's lightwave communication systems. New optical testing techniques include optical beam-induced reflectance (OEIR) , whose signals are used to map silicon, and spatially resolved photoluminescence (SRPL) , which performs highresolution mapping ofIII-V semiconductor materials.

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Section: Applications In Compound Semiconductorsmentioning

confidence: 99%

Non-Destructive Optical Techniques for Characterizing Semiconductor Materials and Devices

Carver

Gray²,

Levkoff

et al. 1994

At&T Technical Journal

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“…For example, materials for optical telecommunication applications require direct bandgaps in the range of 0.80-0.95 eV [3][4][5], while a range of 0.5-2.0 eV is necessary for materials used in efficient solar cells [6][7][8][9]. One material class that is especially versatile in this respect are compound semiconductors, specifically the III-V semiconductors composed of elements from group 13 and 15 of the periodic table of elements [2,5,[10][11][12][13][14][15][16][17][18][19][20][21][22]. In the last decades, the optical properties of this material class have been intensively investigated [2,[10][11][12][13][14][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] and several strategies have emerged to fine-tune the bandgap.…”

Section: Introductionmentioning

confidence: 99%

Systematic strain-induced bandgap tuning in binary III–V semiconductors from density functional theory

Badal

Tonner

2023

Phys. Scr.

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The modification of the nature and size of bandgaps for III-V semiconductors is of strong interest for optoelectronic applications. Strain can be used to systematically tune the bandgap over a wide range of values and induce indirect-to-direct (IDT), direct-to-indirect (DIT), and other changes in bandgap nature. Here, we establish a predictive first-principles approach, based on density functional theory, to analyze the effect of uniaxial, biaxial, and isotropic strain on the bandgap. We show that systematic variation is possible. For GaAs, DITs were observed at 1.52% isotropic compressive strain and 3.52% tensile strain, while for GaP an IDT was found at 2.63% isotropic tensile strain. We additionally propose a strategy for the realization of direct-indirect transition by combining biaxial strain with uniaxial strain. Further transition points were identified for strained GaSb, InP, InAs, and InSb and compared to the elemental semiconductor silicon. Our analyses thus provide a systematic and predictive approach to strain-induced bandgap tuning in binary III-V semiconductors.

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“…This physical phenomena is created by confining potentials in one, such as quantum well (QW) systems, or two, such as quantum well wire (QWW) systems, and three directions, such as artificial atoms or quantum dot (QD) systems [7]. These man-made nanostructures have potential applications in high-speed field-effect transistors, solar cells, and high-efficiency lasers and detectors [8].…”

Section: Introductionmentioning

confidence: 99%

Influence of Heat on Impurity States in an Artificial Semiconductor Atom

Elabsy¹

2000

Egyptian Journal of Solids

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The present work investigates the influence of heat on the donor impurity states in a man-made artificial semiconductor atom (ASA) based on a nano-meter scale, the so-called quantum dot (QD). An on-center donor impurity is considered. The investigated nanostructure is composed of a GaAs semiconductor as the potential well material of the ASA while an Al x Ga 1-x As semiconductor as the potential barrier material of the artificial atom. Different heat dependent effective masses and different heat dependent dielectric constants are used for the two semiconductors constitute the ASA. The lowest energy and the binding energy of the ground state are calculated. The calculations have shown that the lowest electron energy decreases by increasing the ASA radius. For very large radii the lowest energies corresponding to different aluminum contents approach a certain value which is the bulk limit. At a constant ASA radius the lowest energy increases as a function of temperature. A pronounced deviation is obtained when the calculations of the present work are compared with those of Montenegro and Merchancano [18] in which the effects of heat and mismatches for both effective masses and dielectric constants were neglected. It is found that decreasing the temperature and shrinking the radius of the ASA lead to more binding of the donor electron. Increasing the aluminum concentration also enhances the donor electron binding energy. Therefore the electron ground state energy and its associated binding energy are both mainly functions of temperature, ASA radius, and aluminum content.

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III-V Device Technologies for Electronic Applications

Cited by 9 publications

References 8 publications

Non-Destructive Optical Techniques for Characterizing Semiconductor Materials and Devices

Non-Destructive Optical Techniques for Characterizing Semiconductor Materials and Devices

Systematic strain-induced bandgap tuning in binary III–V semiconductors from density functional theory

Influence of Heat on Impurity States in an Artificial Semiconductor Atom

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