Abstract:The present work investigates the influence of heat on the donor impurity states in a man-made artificial semiconductor atom (ASA) based on a nano-meter scale, the so-called quantum dot (QD). An on-center donor impurity is considered. The investigated nanostructure is composed of a GaAs semiconductor as the potential well material of the ASA while an Al x Ga 1-x As semiconductor as the potential barrier material of the artificial atom. Different heat dependent effective masses and different heat dependent diel… Show more
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