Identification of Current Transport Mechanisms and Temperature Sensing Qualifications for Al/(ZnS-PVA)/p-Si Structures at Low and Moderate Temperatures

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3 Interfacial Layer over Wide Temperature Range

“…Since, the barrier has many lower barriers/patches, these carriers may be flowed through these patches and so an addition I may have occurred via these patches and led to an increased in current and n at lower temperatures. 11,16,17 But at high-temperatures, carriers can cross over the obstacle without the need for these patches. So, the TE theory becomes to dominate mechanism in the CCMs.…”

“…In general, the BH value extracted from the standard TE theory is usually decrease with temperature and n increases due to the existence inhomogeneities of BH at M/S interface and these higher changes at lower temperaures cannot explain only in terms of standard TE and TFE theories. [11][12][13][14] The objective of this work is to an investigate temperature dependent basic electric parameters and possible CTCs in the Au/Al 2 O 3 /n-Si SDs between 200 K and 400 K by using the IV between ±3 V. In this study, the increase in BH observed with increase in the temperature, higher values of n even at room temperature, and the deviation linearity of the conventional RP were successfully explained by the GD-model.…”

“…Besides, such an interlayer prevents the inter-diffusion between M and S and also izolatet metal rectifier contact from semiconductor. [5][6][7][8][9][10][11][12] Although, conventional SiO 2 has good dielectric because of its compatibility with semiconductor, but it has low-dielectric permittivity (=3.9ε o ) and hence can not passivated/decreased of high-N ss and dislocations at between interlayer and semiconductor interface and decrease of leakage current under reverse bias. Therefore, in recently, many researchers were focused on the growing high-dielectric thin film at M/S interface such as Al 2 O 3 and TiO 2 insulators, ferro-electric and metal/metaloxide doped polymers.…”

“…In this study, it was grown by ALD technique because of it is popularity because of its chemical-versatility and control film-uniformity. [9][10][11] In general, current conduction through BH governed by TE theory at room and above temperatures, but at low temperatures situation is different. Because variouus CTCs like thermionic/fieldemissions (TFE, FE) and tunneling via Nss at low temperature compete with each-other nad may be dominate over the other at any temperature and voltage range.…”

“…Because variouus CTCs like thermionic/fieldemissions (TFE, FE) and tunneling via Nss at low temperature compete with each-other nad may be dominate over the other at any temperature and voltage range. 1,2,11 The existence of N ss , R s , and BH inhomogeneities are more effective on the CTCs at low temperatures. During the preparation of samples, many Nss with energies located at Eg may be occurred and alter performance of them.…”