The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate temperatures

Demirezen, S.; Alsaç, Aysun Arslan; Çetinkaya, H.G.; Altındal, Ş.

doi:10.1007/s10854-023-10592-7

J Mater Sci: Mater Electron

2023

DOI: 10.1007/s10854-023-10592-7

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The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate temperatures

S. Demirezen

Aysun Arslan Alsaç

H.G. Çetinkaya

et al.

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Cited by 8 publications

References 37 publications

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A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements

Güçlü,

Ulusoy,

Altındal

2024

J Mater Sci: Mater Electron

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In this study, both the Au/(pure-PVA)/n-Si (MPS-1) and Au/(CdTe:PVA)/n-Si (MPS-2) type Schottky diodes (SDs) were fabricated onto the same n-Si wafer in same conditions. After that, their electrical parameters were obtained from the current–voltage (I–V) and capacitance–voltage (C–V) measurements and compared to each other to determine the effect (CdTe:PVA) interlayer on the performance of MPS type SD. The saturation current (Is), ideality factor (n), rectification ratio (RR = Ifor./Irev.), zero-bias barrier height (ΦBo), and series/shunt resistances (Rs, Rsh) were derived utilizing I–V data. The values of Io, n, and ΦBo were found as 9.13 × 10–7 A, 11.07, 0.63 eV for MPS1 and 1.54 × 10–10 A, 3.97, 0.85 eV for MPS2, respectively. The C−2–V graphs were drawn for 0.7 MHz to obtain the doping concentration of donor atoms (ND), Fermi energy (EF), BH/(ΦB(C–V)), depletion layer width (WD), and maximum electric field (Em). The Nss − (Ec − Ess) profile for two SDs was produced from the I–V data by considering the voltage dependence of n and BH. The values of surface states (Nss) were changed between 4.8 × 1013 and 1.7 × 1014 eV−1 cm−2 for MPS1 and 5 × 1012 and 1.15 × 1013 eV−1 cm−2 for MPS2, respectively. All experimental results show that the (CdTe:PVA) interlayer significantly improved the quality of the MS type SDs rather than (pure-PVA) in terms of lower values of leakage/saturation current, n, Nss, and higher RR, BH, and Rsh when compared (pure-PVA) interlayer. The (CdTe:PVA) interlayer may be used instead of the conventional interlayer in the future.

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A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements

Güçlü,

Ulusoy,

Altındal

2024

J Mater Sci: Mater Electron

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Performance prediction of current-voltage characteristics of Schottky diodes at low temperatures using artificial intelligence

Güzel

Çolak

2023

Microelectronics Reliability

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High performance of Ag/AlN/Si Schottky diode: Study of the DC sputtering power effect on its electrical properties

Ktifa,

Khalfaoui,

Rahmani

et al. 2024

Materials Science and Engineering: B

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The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate temperatures

Cited by 8 publications

References 37 publications

A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements

A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements

Performance prediction of current-voltage characteristics of Schottky diodes at low temperatures using artificial intelligence

High performance of Ag/AlN/Si Schottky diode: Study of the DC sputtering power effect on its electrical properties

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