Identification of a Fermi resonance for a defect in silicon: Deuterium-boron pair

Abstract

We interpret an anomalous isotope shift in the vibrational spectrum of the deuterium-boron pair in silicon in terms of a Fermi resonance between the second harmonic of the transverse boron vibration and the fundamental longitudinal deuterium vibration. A simple quantum-mechanical treatment accounts for the reported observations and further predicts the oscillator strength and polarization of infrared absorption of the perturbed second harmonic of the boron vibration. We observe this second harmonic, now allowed due to its mixing with the deuterium mode, in agreement with the model.

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

“…On the other hand, the peak at 1873 cm −1 , which is attributed to the H-B passivation center, did not shift. According to previous results by Pajot et al 21 and Watkins et al, 22 a small B-isotope-related shift has been observed for the peak due to the H-B passivation center. The reason why the isotope shift was not observed in this study is that it is very small, and would not be seen in room temperature Raman experiments.…”

Isotope Frequency Shifts of BH Local Pair Modes in Crystalline Silicon

“…al. [32] interpret the anomalous isotope shift in terms of the Fermi resonance between the second harmonic of the transverse boron vibration and the fundamental longitudinal deuterium vibration. Implicit in their treatment was the assumption that the B local mode has (E) symmetry.…”

“…Nevertheless, it seems that is necessary to make a better resolution measurement at low temperature in order to see if these splittings for boron lines actually exist. Mainly because it is well known that there are numerous effects which shift the lines in the spectra by these small quantities [2,20,31,32]. From the theoretical point of view there is no reason why these small isotope frequency shifts, with mass change, should not exist.…”

Injection Spectroscopy of Thin Layers of Solids

“…The scheme of this interaction has been revealed by infrared optical absorption studies and theoretical calculations consisting of bonding of H to Si atoms of the Si 3 RB SiRSi 3 acceptor complex resulting in saturation of the unpaired electron state (Johnson 1985;DeLeo and Fowler, 1985;Watkins et al, 1990). Therefore, once atomic hydrogen is liberated inside the collector or at its interface(s), some of the released hydrogen atoms may enter the surface layer of B-doped silicon and cause partial passivation (deactivation) of acceptors.…”