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“…There have been numerous approaches to optimize the design of adiabatic mode-evolution-based devices in integrated optics. For adiabatic tapers, one approach is based on the equalization of taper loss along each propagation step [16][17][18]. A similar approach is to limit the fraction of power scattered into the unwanted mode below a constant value [19].…”
We report a 2 × 2 broadband and fabrication tolerant mode-evolution-based 3 dB coupler based on silicon-oninsulator rib waveguides. The operating principle of the coupler is based on the adiabatic evolution of local eigenmodes. The key element of the device is an adiabatically tapered mode evolution region, which converts two dissimilar waveguides into two identical waveguides. Contrary to conventional designs using a linear taper function where the device adiabaticity is uneven during evolution, we use the fast quasiadiabatic approach to homogenize the adiabaticity of the device, leading to a shortcut to adiabaticity. Devices with an optimized taper region of 26.3 μm are designed and fabricated in a complementary metal-oxide-semiconductor compatible process with 193 nm deep ultraviolet lithography. The measured devices exhibit a broadband 3 dB 0.5 dB splitting within a bandwidth of 100 nm, uniformly across a 200-mm wafer, showing good tolerance against fabrication variations.
“…There have been numerous approaches to optimize the design of adiabatic mode-evolution-based devices in integrated optics. For adiabatic tapers, one approach is based on the equalization of taper loss along each propagation step [16][17][18]. A similar approach is to limit the fraction of power scattered into the unwanted mode below a constant value [19].…”
We report a 2 × 2 broadband and fabrication tolerant mode-evolution-based 3 dB coupler based on silicon-oninsulator rib waveguides. The operating principle of the coupler is based on the adiabatic evolution of local eigenmodes. The key element of the device is an adiabatically tapered mode evolution region, which converts two dissimilar waveguides into two identical waveguides. Contrary to conventional designs using a linear taper function where the device adiabaticity is uneven during evolution, we use the fast quasiadiabatic approach to homogenize the adiabaticity of the device, leading to a shortcut to adiabaticity. Devices with an optimized taper region of 26.3 μm are designed and fabricated in a complementary metal-oxide-semiconductor compatible process with 193 nm deep ultraviolet lithography. The measured devices exhibit a broadband 3 dB 0.5 dB splitting within a bandwidth of 100 nm, uniformly across a 200-mm wafer, showing good tolerance against fabrication variations.
“…A general design approach has been proposed by Horth et al and a constant-loss framework taper was presented. [8] Firstly, it was theoretically demonstrated that an inverted taper with constant loss as a function of position along the taper would be most efficient. Then, like multistage tapers, Horth divided the taper into small steps and designed every step with the same propagation loss.…”
Section: Introductionmentioning
confidence: 99%
“…The basic design principle of inverted tapers is to calculate a taper profile which can keep a constant loss at any point of the taper. [8] Essentially, the spot-size conversion loss is mainly from effective mode area (EMA) changing along the taper, which means that the rapid EMA changing results in a large spot-size conversion loss. Motivated by this idea, an equation between EMA and the position within the taper, which make the constant-loss condition satisfied, is firstly derived.…”
Section: Introductionmentioning
confidence: 99%
“…It is numerically demonstrated that the designed inverted taper can reach a much shorter size and a lower loss compared with linear and parabolic inverted tapers. For an inverted-taper SSC with a given length, a clear design guideline is demonstrated in [8]: the taper should have a constant instantaneous loss at any point of the inverted taper. A normal inverted taper profile is illustrated in Figure . 1.…”
Section: Introductionmentioning
confidence: 99%
“…Assuming that the waveguide tapers slowly enough that the EMA changing is small during the extracted cell and the reflection can be ignored. Here, the EMA is defined as: [8] ( )…”
An original design approach for inverted tapers based on effective mode area (EMA) control is proposed. It has been demonstrated that the inverted taper with constant loss as a function of position along the taper is most efficient. First, a general equation which can satisfy this constant loss condition is derived between EMA and the position within the taper. EMA can be controlled by adjusting the waveguide width. Introducing the relationship between EMA and waveguide width into this equation, an optimal profile for the inverted taper is obtained. The design approach is illustrated by applying it to an ideal SOI inverted taper. The conversion loss of the designed inverted taper can be reduced by 60% and 78% compared to parabolic and linear inverted tapers, respectively, when the taper length is 300 μm.
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