In this work, an ultra-low loss silicon nitride (SiN) edge coupler was designed and fabricated to interface with a single-mode fiber (SMF). Unlike other works that focus on the core structure, this work focuses on the cladding structure. First, it is demonstrated that the cladding structure ultimately determines the size and shape of the mode when the taper tip width is small enough. Then, the thickness of the up-cladding is optimized to provide enough space for mode expansion in the vertical direction. Air trenches are added to confine the mode laterally. In addition, the refractive index (RI) of the up-cladding layer is slightly increased to prevent light from leaking into the Si substrate. This edge coupler is then fabricated on the SiN platform at Chongqing United Microelectronics Center. For the TE mode at 1630 nm, a coupling loss of 0.67 dB/facet was obtained. At 1550 nm, 0.85 dB/facet and 1.09 dB/facet were measured for the TE and TM modes, respectively, which means that the polarization-dependent loss is 0.24 dB. Although the design method and the structure are based on a pure SiN platform, they are applicable to a silicon-on-insulator platform as well.
The accurate calibration of large-scale switch networks is critical for integrated photonics, in which the integrated optical true time delay chip is typical. In this work, a novel self-calibration method without extra testing ports is proposed by introducing lossless thermo-optic phase shifters instead to calibrate the network. As a demonstration, a 5-bit delay line based on silicon nitride is fabricated and calibrated. The extinction ratio of all the switches is greater than 30.9 dB at the cross and bar states. Using this method, the 5-bit optical delay line which can be tuned in a range of 118.53 ps and reach a low delay time deviation less than ±0.4 ps.
An original design approach for inverted tapers based on effective mode area (EMA) control is proposed. It has been demonstrated that the inverted taper with constant loss as a function of position along the taper is most efficient. First, a general equation which can satisfy this constant loss condition is derived between EMA and the position within the taper. EMA can be controlled by adjusting the waveguide width. Introducing the relationship between EMA and waveguide width into this equation, an optimal profile for the inverted taper is obtained. The design approach is illustrated by applying it to an ideal SOI inverted taper. The conversion loss of the designed inverted taper can be reduced by 60% and 78% compared to parabolic and linear inverted tapers, respectively, when the taper length is 300 μm.
We present chirped anti-symmetric multimode nanobeams (CAMNs) based on silicon-on-insulator platforms, and describe their applications as broadband, compact, reflection-less, and fabrication-tolerant TM-pass polarizers and polarization beam splitters (PBSs). The anti-symmetric structural perturbations of a CAMN ensure that only contradirectional coupling between symmetric and anti-symmetric modes is possible, which can be exploited to block the unwanted back reflection of the device. The new possibility of introducing a large chirp on an ultra-short nanobeam-based device to overcome the operation bandwidth limitation due to the coupling coefficient saturation effect is also shown. The simulation results show that an ultra-compact CAMN with a length of ∼4.68 um can be used to develop a TM-pass polarizer or a PBS with an ultra-broad 20 dB extinction ratio (ER) bandwidth of >300 nm and an average insertion loss of <1.3 dB. The CAMN-based polarizer and PBS were fabricated and experimentally characterized in a wavelength range from 1507 to 1575 nm. The measured ERs were >20 dB over the entire tested wavelength range and the average insertion losses were <0.5 dB for both devices. The mean reflection suppression ratio of the polarizer was ∼26.4 dB. Large fabrication tolerances of ±60 nm in the waveguide widths of the devices were also demonstrated.
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