ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

Aubry, R.; Jacquet, J.; Oualli, M.; Patard, O.; Piotrowicz, S.; Chartier, E.; Michel, N.; Li, Xuan; Lancereau, D.; Potier, Clément; Magis, M.; Gamarra, Piero; Lacam, C.; Tordjman, M.; Jardel, Olivier; Dua, C.; Delage, S.

doi:10.1109/led.2016.2540164

Cited by 49 publications

(11 citation statements)

References 9 publications

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“…LTRA-THIN quaternary barrier InAlGaN/GaN High Electron Mobility Transistors (HEMTs) hold a tremendous potential for microwave and millimeter-wave applications, thanks to their outstanding 2-DEG properties that allowed to achieve state of the art electron mobility of 1800 cm 2 •V -1 •s -1 and sheet carrier density of 1.9•10 13 cm -2 at room temperature [1]. This is owing to the use of Al-rich InAlGaN layers having an important effect to enhance the carrier density and achieve high frequency performance due to the increase of the spontaneous polarization [2]- [6].…”

Section: Introductionmentioning

confidence: 99%

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

Rzin

Guillet

Méchin

et al. 2019

IEEE Trans. Electron Devices

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This paper reports on sub-10 nm quaternary barrier InAlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Metal-Organic-Vapor-Phase-Epitaxy (MOVPE) with an in situ SiN passivation layer, and ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14 and 22 nm are studied. Low Frequency Noise (LFN) measurements of the drain current have been carried out in the linear regime and showed that the in situ SiN thickness has no impact on the noise performance. S ID /I D 2 in the linear regime dependence over the gate overdrive shows that the channel noise is located under the gate and that the noise is not impacted by the thickness of the in situ SiN layer.

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Section: Introductionmentioning

confidence: 99%

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

Rzin

Guillet

Méchin

et al. 2019

IEEE Trans. Electron Devices

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“…The combination of AlGaN and AlInN as a quaternary (InAlGaN) allows to independently adjusting the bandgap and lattice constant to avoid the formation of cracks by controlling the builtin strain [6]. Also, the use of Al-rich InAlGaN layers has a great potential to enhance the carrier density and achieve highfrequency performances due to the increase of the spontaneous polarization [7]- [14].…”

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confidence: 99%

Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of <italic>In Situ</italic> SiN Passivated InAlGaN/GaN MIS-HEMTs

Rzin

Routoure

Guillet

et al. 2017

IEEE Trans. Electron Devices

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In this paper we investigated the gate-drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metalinsulator-semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate-drain spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for L GD < 10 μm. Finally, the calculated Hooge parameter (α H) is equal to 3.1 × 10 −4. It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications. Index Terms-Channel resistance, gate-drain spacing, in situ sin passivation, InAlGaN/GaN, low-frequency noise (LFN), metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). I. INTRODUCTION G AN-based high electron mobility transistors (HEMTs) have demonstrated their potential for telecommunication and power applications owing to the high electrical breakdown field (3.3 MV/cm) and the high electron mobility (2 ×10 3 cm 2 • V −1 • s −1) of GaN material [1]. Extensive research and technology development enabled GaN-based HEMTs to significantly improve over the last two decades.

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“…[ 3 ] Nevertheless, a detrimental rise in leakage current may be caused by fabrication damages. [ 4,5 ] Remote inductively coupled plasma chemical vapor deposition (ICP‐CVD) [ 6 ] and low‐pressure chemical vapor deposition (LPCVD) [ 7 ] techniques have been proposed for damage‐free passivation. However, these techniques require longer time, higher cost, and higher temperature.…”

Section: Introductionmentioning

confidence: 99%

Comparative Study on Characteristics of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Zhen

Wang

Qin

et al. 2022

Physica Status Solidi (a)

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GaN-based high-electron-mobility transistors (HEMTs) have emerged as a promising candidate for next-generation high-efficiency power electronics including high-frequency power amplifiers and high-voltage power switches. [1] However, reliability problems such as gate leakage current and current collapse are the main issues that limit the performance of AlGaN/GaN HEMTs. [2] The common way to reduce the current collapse of devices is to grow a SiN x as a passivation layer. [3] Nevertheless, a detrimental rise in leakage current may be caused by fabrication damages. [4,5] Remote inductively coupled plasma chemical vapor deposition (ICP-CVD) [6] and low-pressure chemical vapor deposition (LPCVD) [7] techniques have been proposed for damage-free passivation. However, these techniques require longer time, higher cost, and higher temperature. [1] It is still a challenge to obtain lower gate leakage and lower current collapse simultaneously.

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ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

Cited by 49 publications

References 9 publications

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of <italic>In Situ</italic> SiN Passivated InAlGaN/GaN MIS-HEMTs

Comparative Study on Characteristics of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

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