In this paper we investigated the gate-drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metalinsulator-semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate-drain spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for L GD < 10 μm. Finally, the calculated Hooge parameter (α H) is equal to 3.1 × 10 −4. It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications. Index Terms-Channel resistance, gate-drain spacing, in situ sin passivation, InAlGaN/GaN, low-frequency noise (LFN), metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). I. INTRODUCTION G AN-based high electron mobility transistors (HEMTs) have demonstrated their potential for telecommunication and power applications owing to the high electrical breakdown field (3.3 MV/cm) and the high electron mobility (2 ×10 3 cm 2 • V −1 • s −1) of GaN material [1]. Extensive research and technology development enabled GaN-based HEMTs to significantly improve over the last two decades.
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