On-Wafer Fast Evaluation of Failure Mechanism of 0.25-<i>μ</i>m AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

Rzin, Mehdi; Meneghini, Matteo; Rampazzo, F.; Zhan, Verónica Gao; Marcon, Daniele; Grünenpütt, Jan; Jung, Helmut; Lambert, Benoît; Riepe, K.; Blanck, H.; Graff, Andreas; Altmann, Frank; Simon-Najasek, Michél; Poppitz, David; Meneghesso, Gaudenzio; Zanoni, Enrico

doi:10.1109/ted.2020.2996983

Cited by 3 publications

(8 citation statements)

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“…The 0.25 μm GaN/AlGaN/GaN HEMTs for microwave applications up to 20 GHz have been tested. [ 48 ] Devices adopted a 22 nm AlGaN barrier with 22% Al content and Ti/Al/Ni/Au ohmic contacts. Two different sets of devices were tested: 1) GEN1, adopting a Ni/Pt/Au Schottky gate metallization and standard plasma‐enhanced chemical vapor deposition (PE‐CVD) for SiN passivation; and 2) GEN2 devices, adopting a different gate metallization scheme and a double‐layer SiN passivation.…”

Section: Failure Mechanisms Of Rf Gan Hemts: Three Case Studiesmentioning

confidence: 99%

“…Left: transconductance g m in a GEN1 HEMT before and after 24 h test at V GS = 0 V, V DS = 30 V; right: after 24 h at V GS = 0 V, V DS = 60 V. Reproduced with permission. [ 48 ] Copyright 2020, IEEE.…”

Section: Failure Mechanisms Of Rf Gan Hemts: Three Case Studiesmentioning

confidence: 99%

Section: Failure Mechanisms Of Rf Gan Hemts: Three Case Studiesmentioning

confidence: 99%

Section: Second Case Study: Effect Of Subthreshold Characteristics On...mentioning

confidence: 99%

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Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results

Zanoni

Rampazzo

Santi

et al. 2022

Physica Status Solidi (a)

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Herein, the results are reviewed concerning reliability of high‐electron mobility transistors (HEMTs) based on GaN, which currently represent the technology of choice for high‐efficiency microwave and millimeter‐wave power amplifiers. Several failure mechanisms of these devices are extensively studied, including converse piezoelectric effects, formation of conductive percolation paths at the edge of gate toward the drain, surface oxidation of GaN, time‐dependent breakdown of GaN buffer, and of field‐plate dielectric. For GaN HEMTs with scaled gate length, the simultaneous control of short‐channel effects, deep‐level dispersion, and hot‐electron‐induced degradation requires a careful optimization of epitaxial material quality and device design.

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Section: Failure Mechanisms Of Rf Gan Hemts: Three Case Studiesmentioning

confidence: 99%

Section: Failure Mechanisms Of Rf Gan Hemts: Three Case Studiesmentioning

confidence: 99%

Section: Failure Mechanisms Of Rf Gan Hemts: Three Case Studiesmentioning

confidence: 99%

Section: Second Case Study: Effect Of Subthreshold Characteristics On...mentioning

confidence: 99%

See 2 more Smart Citations

Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results

Zanoni

Rampazzo

Santi

et al. 2022

Physica Status Solidi (a)

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“…As the EELS signals are generated below the specimen, the spectrometer is located in the post-column after the viewing screen using a magnetic prism to disperse electrons onto the detector. A spectrum consisting of electron intensity versus electron energy loss is recorded in the camera [20]. As shown in Figure 3.18, an imaging filter detector is located under the TEM viewing screen.…”

Section: Chemical Analysismentioning

confidence: 99%

Study of the effect of forward gate bias stress on the reliability of AlGaN/GaN HEMTs on SI

Gao¹

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AlGaN/GaN high electron mobility transistors (HEMTs) have shown promising capabilities for high frequency and high-power applications. As 5G technology and autonomous vehicles become more and more attractive, HEMTs will start to play an increasingly important role in the semiconductor industry. While GaN HEMTs are most commonly fabricated on SiC or sapphire substrates, HEMTs on Si is an attractive alternative due to lower processing costs and the ability for monolithic integration with Si-CMOS (Complementary Metal Oxide Semiconductor). However, the wide-scale adoption carrier concentration, permittivity, electron mobility, saturated drift velocity, breakdown field and thermal conductivity) and the Johnson's figure of merit (JM) for Si, GaAs and GaN (The crystal structure information of Si, GaAs, GaN and AlN is shown in the appendix). JM is the product of the breakdown field and saturated drift velocity, providing the power-frequency limit based only on material properties [5, 6]. For high power and high frequency transistors, this requires the device materials to have high breakdown voltage and high saturated drift velocity. Thus, from the JM value, GaN is much more promising in high frequency, high power and high voltage applications than GaAs and Si.Due to these encouraging features, GaN HEMTs are extremely attractive for both research and commercial applications.= 2 1 2.7 27.5 GaN HEMT and its applicationGaN is a binary III/V semiconductor material with a wide bandgap [7]. GaN HEMTs are grown in the Wurtzite phase of GaN, as it is the most stable structure under ambient conditions [8, 9]. Furthermore, it has a built-in spontaneous polarization field, which comes from the ionicity of Ga-N covalent bonds and the low inversion symmetry of the Wurtzite structure. This spontaneous polarization is essential for building a high mobility transistor due to the polarization charges built at the AlGaN/GaN interface. To take advantage of the spontaneous polarization field, GaN is grown along the [0001] axis for HEMTs. The resulting surface is either Ga-terminated or N-terminated, depending on the growth method and substrate. The two different terminations determine the polarization field direction which are opposed to each other and have effects on both device fabrication and performance [10]. The two different faces are shown in Figure 1.2. fast multi-device wireless chargers based on those devices. These have become important features for consumer electronics devices [20]. GaN HEMTs on SiliconConventionally, GaN is grown on sapphire or SiC substrates rather than silicon substrates.Although, 6 inch sapphire and SiC wafers and 4 inch GaN wafers are available in the market, the fabrication cost is high because crystal growth for these three materials is However, growing GaN on Si is a very challenging task. First, the lattice mismatch between GaN and Si is larger than that between GaN and sapphire, as well as GaN and SiC (shown in Figure 1.4. Due to the huge lattice mismatch between GaN and Si, many defects will be created...

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Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress

Tan,

Gao,

Syaranamual

et al. 2023

Microelectronics Reliability

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On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

Cited by 3 publications

References 21 publications

Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results

Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results

Study of the effect of forward gate bias stress on the reliability of AlGaN/GaN HEMTs on SI

Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress

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