Comparative Study on Characteristics of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Zhen, Zixin; Wang, Quan; Qin, Yanbin; Chen, Changxi; Xu, Jin; Jiang, Lijuan; Xiao, Hao; Wang, Qian; Wang, Xiaoliang; Tan, Manqing; Chi, Feng

doi:10.1002/pssa.202200010

Cited by 5 publications

(2 citation statements)

References 36 publications

(46 reference statements)

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“…The detailed inforamtion has been discussed in our former report. 11 A 1.6 μm undoped-GaN buffer layer is grown on a sapphire substrate, followed by a 25 nm Al 0.25 Ga 0.75 N barrier layer. The structures were grown by metal-organic chemical vpor deposition(MOCVD).…”

Section: Methodsmentioning

confidence: 99%

Effect of Double Insulators on the Performance Improvement of 3 MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs

Zhen

Xiao

Jiang

et al. 2023

ECS J. Solid State Sci. Technol.

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To improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) after exposure to high-energy proton irradiation, A MIS-HEMT with Al2O3 /SiNx (SiNx next to semiconductor) double insulators is proposed and fabricated. The common Schottky gate HEMT and MISHEMTs with single SiNx layer and single Al2O3 layer are also fabricated as a control for comparison. After exposure to 3-MeV proton irradiation with a fluence of 1×1014cm-2, the MIS-HEMT with Al2O3 /SiNx double insulators show the smallest drain saturation current and breakdown voltage degradation, the smallest voltage drift, and interface charge change through IV and CV tests. The smallest degradation of the carrier density and mobility contributes to its better saturation current degradation performance. Experimental results of voltage drift are in accordance with simulation results. The MIS-HEMT with Al2O3 /SiNx double insulators exhibits the lowest drain current degradation and the quickest response during hard switching tests. A relatively large displacement threshold energy of Al2O3 and better passivation effect of SiNx contribute to the reliability improvement of AlGaN/GaN HEMTs after the proton-irradiation.

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Section: Methodsmentioning

confidence: 99%

Effect of Double Insulators on the Performance Improvement of 3 MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs

Zhen

Xiao

Jiang

et al. 2023

ECS J. Solid State Sci. Technol.

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“…Compared with the SiC substrate, the Si substrate has a better cost advantage. Therefore, high resistance (HR) Si(111)-based AlGaN/GaN HEMTs are considered the most promising GaN RF device and have become a research hotspot of researchers in recent years [ 9 , 10 , 11 , 12 , 13 ].…”

Section: Introductionmentioning

confidence: 99%

A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application

et al. 2023

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The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (Vknee), saturation current density (Id-sat), and cut-off frequency (ft) of its high electron mobility transistor (HEMT) are simulated and analyzed. A novel optimization factor OPTIM is proposed by considering the various performance parameters of the device to reduce the Vknee and improve the Id-sat on the premise of ensuring the ft. Based on this factor, the optimized AlGaN/GaN epitaxial structure was designed with a barrier layer thickness of 20 nm, an Al component in the barrier layer of 25%, and a SiN passivation layer of 6 nm. By simulation, when the gate voltage Vg is 0 V, the designed device with a gate length of 0.15 μm, gate-source spacing of 0.5 μm, and gate-drain spacing of 1 μm presents a high Id-sat of 750 mA/mm and a low Vknee of 2.0 V and presents ft and maximum frequency (fmax) as high as 110 GHz and 220 GHz, respectively. The designed device was fabricated and tested to verify the simulation results. We demonstrated the optimization factor OPTIM can provide an effective design method for follow-up high-frequency and low-voltage applications of GaN devices.

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Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing

Wang

Yan

et al. 2023

IEEE Electron Device Lett.

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Comparative Study on Characteristics of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Cited by 5 publications

References 36 publications

Effect of Double Insulators on the Performance Improvement of 3 MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs

Effect of Double Insulators on the Performance Improvement of 3 MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs

A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application

Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing

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