Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing

Wang, Chenlu; Yan, Qinglong; Su, Chunxu; Alghamdi, Sami; Ghandourah, E.; Liu, Zhihong; Feng, Xin; Zhang, Weihang; Dang, Kui; Wang, Yingmin; Wang, Jian; Zhang, Jincheng; Zhou, Hong

doi:10.1109/led.2023.3237598

Cited by 14 publications

(5 citation statements)

References 34 publications

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“…[105] The utilization of AOSs as active channel materials in TFTs has gained significant attention in recent years and demonstrated remarkable advances in terms of high μ, low offcurrent, low process temperature, versatile composition, and refined processing flexibility. Various AOSs have been extensively investigated, including In 2 O 3 , [106] Ga 2 O 3 , [107] ZnO, [108] ITO, [109] IGZO, [110] and HfInZnO, [111] with resulting publications available in the academic literature.…”

Section: Amorphous Oxide Semiconductor Tftsmentioning

confidence: 99%

Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

Yan,

Wang,

Yan

et al. 2023

Adv Funct Materials

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High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become increasingly necessary to meet the emerging demands such as healthcare, edge computing, and the Internet of Things, etc. This article aims to point out the potential development trends and bottlenecks of TFT ICs, enhancing their performance in terms of electronic performance, stability, consistency, CMOS design, and manufacturing capability. Basic device structures and overall metrics of TFT ICs are explored, as well as their superiority compared to silicon‐based ultrathin chips. Hydrogenated amorphous silicon, low‐temperature polycrystalline silicon, and amorphous oxide semiconductors are widely used in displays due to their ability to be deposited on large areas at low processing temperatures and low cost, and are validated in many prototypes for TFT ICs. Their conduction mechanisms, process flows, performance evaluation, and recent advances are comprehensively viewed. In addition, the potential of emerging low‐dimensional materials as next‐generation channel materials is discussed, along with their limitations and progress in this field. Finally, the major challenges in manufacturing high‐performance TFT ICs and future perspectives are summarized.

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Section: Amorphous Oxide Semiconductor Tftsmentioning

confidence: 99%

Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

Yan,

Wang,

Yan

et al. 2023

Adv Funct Materials

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“…We have also analyzed the reasons why this effect is not reported or discussed in the lateral NiO/β-Ga 2 O 3 HJ-FET. 29,30,38,39 First of all, this electron confinement effect needs to be realized in E-mode HJ-FET so that appropriate positive bias can be applied to the gate. Subsequently, although the introduction of PN junctions enhances channel depletion, effective implementation of E-mode still requires relatively narrow channels, which results large channel resistance.…”

Section: Onspmentioning

confidence: 99%

“…on,sp But it is noted that the I D rise rate of Low E C Δ Fin-HJFET at V GS = 2.5 V is close to that of High E C Δ Fin-HJFET. And at this point the R on,sp is 3.1 m cm 2 Ω⋅ for Low E C Δ Fin-HJFET, which decreases a lot from 4.4 m cm 2 Ω⋅ at V GS = 2 V. Therefore, as the optimization adopted in the lateral HJ-FETs, 30,38 adding the gate dielectric to widen the gate swing is more essential to improve the performance of Low E C Δ Fin-HJFET. Alternatively, different from what we often pursue in heterojunction diodes, try to increase the V on of the heterojunction in Fin-HJFET.…”

Section: ω⋅mentioning

confidence: 99%

“…Among these, NiO is considered the most promising one to construct heterojunction owing to its wide bandgap of 3.6-4.0 eV, controllable p-type doping and decent hole mobility, 24 which has been used in a variety of heterojunction (HJ) diodes [25][26][27][28] and lateral HJ-FETs. 29,30 In this paper, we propose a novel vertical fin-based NiO/β-Ga 2 O 3 heterojunction field-effect transistor (Fin-HJFET) and study it by simulation. Different from homogeneous junctions, the NiO/β-Ga 2 O 3 heterojunction will additionally influence the performance of Fin-HJFET.…”

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confidence: 99%

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Novel Vertical Fin-Based NiO/β-Ga₂O₃ Heterojunction Field-Effect Transistor with a Low R_on,sp

Huang,

Chen,

et al. 2023

ECS J. Solid State Sci. Technol.

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A novel vertical ﬁn-based NiO/β-Ga2O3 heterojunction ﬁeld-effect transistor (Fin-HJFET) is proposed and studied by TCAD. Theoretically high conduction band offset ( ) enables Ga2O3 Fin-HJFET to produce an electron confinement effect at a certain gate bias voltage. According to the simulation results, this effect means Ga2O3 Fin-HJFET can not only form surface-conducting fin channels that are not available in conventional ﬁn-based junction ﬁeld-effect transistor (Fin-JFET), but also have a stronger electron accumulation capability than Ga2O3 vertical FinFET due to the deep potential well, which leads to a lower specific on-resistance ( ). In addition, Ga2O3 Fin-HJFET inherits the advantages of Ga2O3 FinFET as a vertical normally-off device and has a higher breakdown voltage compared to FinFET without field plates due to the protection of the highly doped NiO layer. Particularly, Fin-HJFET with different heterojunction band alignments are also considered and discussed. Finally, the parameter influence and future optimization space of this highly promising device are explored, providing guidance for actual device fabrication and future device improvement.

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“…One difficulty, however, is the increased gate leakage which occurs when the pn junction becomes forward-biased. A proposed solution, studied initially through TCAD simulations and verified using fabricated devices, is the addition of a dielectric layer between the p-NiO and gate metal to suppress gate leakage when the pn junction is forward-biased [76,235]. A 20 nm ALD-SiO 2 interlayer reduced the gate leakage by six orders of magnitude, maintained an on/off ratio of 10 6 , and improved the gate swing from 3 V to 13 V compared to the non-interlayer FET (Figure 18b).…”

Section: P-gatesmentioning

confidence: 99%

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

Maimon,

2023

Materials

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Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly with the emergence of electric vehicles, renewable energy generation, and energy storage. New materials that are better suited for high-power applications are needed as the Si material limit is reached. Beta-phase gallium oxide (β-Ga2O3) is a promising ultra-wide-bandgap (UWBG) semiconductor for high-power and RF electronics due to its bandgap of 4.9 eV, large theoretical breakdown electric field of 8 MV cm−1, and Baliga figure of merit of 3300, 3–10 times larger than that of SiC and GaN. Moreover, β-Ga2O3 is the only WBG material that can be grown from melt, making large, high-quality, dopable substrates at low costs feasible. Significant efforts in the high-quality epitaxial growth of β-Ga2O3 and β-(AlxGa1−x)2O3 heterostructures has led to high-performance devices for high-power and RF applications. In this report, we provide a comprehensive summary of the progress in β-Ga2O3 field-effect transistors (FETs) including a variety of transistor designs, channel materials, ohmic contact formations and improvements, gate dielectrics, and fabrication processes. Additionally, novel structures proposed through simulations and not yet realized in β-Ga2O3 are presented. Main issues such as defect characterization methods and relevant material preparation, thermal studies and management, and the lack of p-type doping with investigated alternatives are also discussed. Finally, major strategies and outlooks for commercial use will be outlined.

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Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing

Cited by 14 publications

References 34 publications

Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

Novel Vertical Fin-Based NiO/β-Ga₂O₃ Heterojunction Field-Effect Transistor with a Low R_on,sp

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

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Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing

Cited by 14 publications

References 34 publications

Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

Novel Vertical Fin-Based NiO/β-Ga2O3 Heterojunction Field-Effect Transistor with a Low Ron,sp

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

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Product

Resources

About

Novel Vertical Fin-Based NiO/β-Ga₂O₃ Heterojunction Field-Effect Transistor with a Low R_on,sp