I-V Characteristics for Bifacial Silicon Solar Cell under a Magnetic Field

Abstract

In this work, the influence of magnetic field on I-V characteristics of bifacial silicon solar cell n+-p-p+ structure is studied under constant multispectral illumination. After resolution of continuity equation related to photogenerated minority carriers’ density in the base region of this cell, MATLAB numerical simulations of excess minority carriers’, photocurrent densities and junction photovoltage profiles, have been developed with magnetic field in the bulk of the base region. In the same way, the IV characteristics have been studied with magnetic field. It has been demonstrated that the I–V characteristics decreased. It also has shown how the I–V characteristics changed.

A method to determine the transient capacitance of the bifacial solar cell considering the cylindrica grain and the dynamic junction velocity (Sf)

“…These two models permit also to calculate the excess minority carriers density, the photocurrent I [5], the phototension V [5], the solar V and P-V characteristics [5], the intrinsic junction recombination velocity (Sf0) [1,2], the real [1,2], the series and shunt resistances [5] and the diffusion capacitance solar cell's efficiency. Considering these two dimensions, effects of magnetic and electric fields and the irradiation on the electrical solar cell parameters are also studied [7,8]. In [3], authors used the columnar grains model and concluded that the solar cell's junction could be considered as a plane capacitor with two identical plane electrodes separated by an extension region width which de the dynamic junction velocity (SF), the grain size, the grain boundary recombination velocity and the wavelength.…”

Wavelength and Constant Magnetic field Dependence of the Steady-state Photoconductivity of a Bifacial Silicon Solar Cell

“…In Figure 1, we present, a 3D model of an n + -p-p + type of a bifacial silicon solar cell [19,20] under magnetic field [21][22][23].…”

Silicon Solar Cells: Recombination and Electrical Parameters

“…SZE 1981) in one side and N + -N-P + structure (or vice versa) for double sides named bifacial silicon solar cell (S. Madougou et al 2004Madougou et al , 2005aMadougou et al , 2005bMadougou et al , 2007aMadougou et al et 2007b. Silicon solar cells have all contacts on the back of the cell.…”

“…The photocurrent density I at the junction of solar cell is obtained from the excess minority carriers density of each illumination mode as follows (S. Madougou et al 2004Madougou et al et 2007a:…”