<i>p</i>-type behavior in phosphorus-doped (Zn,Mg)O device structures

Heo, Young‐Woo; Kwon, Younggoo; Li, Y.; Pearton, S. J.; Norton, D. P.

doi:10.1063/1.1737795

Cited by 208 publications

(102 citation statements)

References 48 publications

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“…In fact, many sophisticated strategies have been employed to achieve suitable p-type doping in ZnO. [5][6][7][8][9][10][11][12][13] Among them, nitrogen has been considered as a promising p-type dopant of ZnO because of its similar ionic radius to oxygen. 14 Although nitrogen incorporation in ZnO has been intensively investigated experimentally and theoretically, the progress along this direction is slow, and nitrogen doping mechanisms and modes [15][16][17][18][19] are still controversial.…”

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confidence: 99%

Nitrogen deep accepters in ZnO nanowires induced by ammonia plasma

Huang

Guo

et al. 2011

Applied Physics Letters

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Nitrogen doping in ZnO nanowires was achieved through ammonia plasma treatment followed by thermal annealing. The strong dependence of the red light emission from the nanowires excited by 2.4 eV on the nitrogen concentration, suggests that the red light emission originates from nitrogen related defects. The mechanism responsible for the red light emission is in good agreement with the deep-acceptor model of nitrogen defects, clarifying that nitrogen atoms caused deep accepters in ZnO nanowires. Based on this model, the enhanced green emission from defects in nitrogen-doped samples (excited by 325 nm line) can be well explained by the increase of the concentration of activated oxygen vacancies resulting from the compensation of nitrogen deep acceptors.

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confidence: 99%

Nitrogen deep accepters in ZnO nanowires induced by ammonia plasma

Huang

Guo

et al. 2011

Applied Physics Letters

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“…Several groups have found success with N doping, 10,11,13,14,16,[18][19][20][22][23][24][25]28,29 which is not surprising since the ionic radius of N is about that of O, so that N should be quite soluble as N O . On the other hand, there are only a few reports of p-type ZnO from P 21,27,30 or As 12,26 doping, and almost no reports involving any of the other possible dopants. In this letter, we discuss an evaporation/ sputtering method of creating As-doped, p-type ZnO.…”

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confidence: 99%

As-doped p-type ZnO produced by an evaporation∕sputtering process

Renlund¹,

Burgener²,

Sizelove

2004

Applied Physics Letters

277

115

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Strongly p-type ZnO is produced by the following sequence of steps: (1) evaporation of Zn3As2 on a fused-quartz substrate at 350°C; and (2) sputtering of ZnO with substrate held at 450°C. The electrical characteristics include: resistivity of 0.4Ωcm, a mobility of 4cm2∕Vs, and a hole concentration of about 4×1018cm−3. This resistivity is among the best (lowest) ever reported for p-type ZnO. Secondary-ion mass spectroscopic analysis gives an average As concentration about 5×1019cm−3, and a simple one-band fit of the temperature-dependent mobility curve yields an acceptor concentration of about 9×1019cm−3. This is strong evidence that the p-type dopant involves As, although it is not clear whether the acceptor is simply AsO or the recently suggested AsZn−2VZn.

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“…Figure 1 energy and potentially away from the intrinsic shallow donor state, thus increasing the activation energy of the defect donors and reducing the background electron concentration [12]. Therefore, it is possible that the better electrical properties of the Sb-doped Zn 0.95 Mg 0.05 O thin film are attributed to the incorporation of Mg, which will reduce the background electron concentration.…”

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confidence: 99%