Nitrogen deep accepters in ZnO nanowires induced by ammonia plasma

Huang, Rui; Xu, Sean Xin; Guo, Wenhao; Wang, Lin; Song, Jie; Ng, Tsz‐Wai; Huang, J. K.; Lee, Shuit‐Tong; Du, Shengwang; Wang, Ning

doi:10.1063/1.3647773

Cited by 16 publications

(4 citation statements)

References 26 publications

(30 reference statements)

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“…Each solid line represents the sum of three Lorentzian peaks at a particular temperature based on a fitting procedure as discussed in more detail below. A sharp UV peak and a broad band can be clearly seen, similar to what other groups have observed from ZnO films deposited on conductive glass via ECD or on Si substrates using either chemical vapor transport or hydrothermal processing with ZnO nanocrystals acting as the seeds .…”

Section: Resultssupporting

confidence: 84%

Influence of Mg‐doping on the optical properties of ZnO thin films prepared via electrochemical deposition

Shi

Alfaro

Barrera

et al. 2013

Physica Status Solidi (a)

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Polycrystalline ZnO thin films were deposited on pure Al foils at 80 °C using electrochemical deposition (ECD) in solutions containing zinc nitrate hexahydrate and hexamethylenetetramine. Photoluminescence (PL) spectra between 20 and 200 K showed intense UV emissions near the band edge along with weak broad bands due to defects. When the source solution was slightly doped with Mg2+ ions, the defect‐induced band was suppressed along with a redshift, whereas the UV peak position and intensity remained the same. Surprisingly, Auger electron spectroscopy (AES) revealed no Mg contents in the films within the detection limit. Based on the solubility products of Mg(OH)2 and Zn(OH)2, we put forward a mechanism to describe how metal impurities could be incorporated into ZnO in such an aqueous process, which was strongly supported by samples grown in Ca‐ or Cu‐doped solutions. To further corroborate, we also fabricated, for the first time via ECD, MgZnO alloys in Mg‐doped solutions with very high nitrate concentrations. Blue shift of the UV emission peak was clearly observed from as‐prepared samples on Al. MgZnO films, deposited on Si substrates under similar supersaturated conditions and annealed in ambient air at 350 °C for 30 min, showed a similar peak shift. This electrochemical route could therefore be used as an effective approach to enhance the optical properties of compound semiconductors, demonstrating its potential for deep UV applications as well.

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Section: Resultssupporting

confidence: 84%

Influence of Mg‐doping on the optical properties of ZnO thin films prepared via electrochemical deposition

Shi

Alfaro

Barrera

et al. 2013

Physica Status Solidi (a)

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“…The N O was widely considered as a shallow acceptor for a long time. However, recent calculations demonstrated that the N O has an exceedingly high ionization energy of 1.3 eV [31], supported by the experimental results of Huang et al [32], which means N O is not the natural candidate for explaining the observed A 0 X. Lately, more and more papers have a tendency to assign the unidentified shallow acceptor to a native - extrinsic complex or native defect cluster complex, including 2V Zn − D Zn (D = P, As, Sb) [33, 34], V Zn − N O [13], 2V Zn − V O [35], 3V Zn − D i (D = P, As, Sb) [36], and V Zn clusters [16].…”

Section: Resultsmentioning

confidence: 68%

The Luminescent Inhomogeneity and the Distribution of Zinc Vacancy-Related Acceptor-Like Defects in N-Doped ZnO Microrods

Yao

Tang

et al. 2016

Nanoscale Res Lett

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Vertically aligned N-doped ZnO microrods with a hexagonal symmetry were fabricated via the chemical vapor transport with abundant N2O as both O and N precursors. We have demonstrated the suppression of the zinc interstitial-related shallow donor defects and have identified the zinc vacancy-related shallow and deep acceptor states by temperature variable photoluminescence in O-rich growth environment. Through spatially resolved cathodoluminescence spectra, we found the luminescent inhomogeneity in the sample with a core-shell structure. The deep acceptor-isolated VZn and the shallow acceptor VZn-related complex or clusters mainly distribute in the shell region.

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“…In this paper, we utilized a plasma‐treatment process to prepare N‐doped ZnO single crystal at room temperature. Several studies concerning the effects of ammonia or hydrogen plasma post‐treatment on ZnO could be found in the literature . This is the first report of the nitrogen plasma post‐treatment on ZnO single crystal.…”

Section: Introductionmentioning

confidence: 95%

Nitrogen‐doped ZnO obtained by nitrogen plasma treatment

Wang

Zhao

Wang

et al. 2015

Physica Status Solidi (a)

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We carried out a nitrogen plasma treatment process to obtain N-doped ZnO single crystal. The treated sample showed an acceptor related emission located at 3.354 eV when excited by a 325-nm He-Cd laser at 85 K. Raman spectra revealed the formation of a bond between Zn and N atoms. The surface work function indicated increasing of hole concentration of the N-plasma-treated ZnO. By constructing a ZnO-based homojunction, the I-V curve displayed perfect rectification performance.

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Nitrogen deep accepters in ZnO nanowires induced by ammonia plasma

Cited by 16 publications

References 26 publications

Influence of Mg‐doping on the optical properties of ZnO thin films prepared via electrochemical deposition

Influence of Mg‐doping on the optical properties of ZnO thin films prepared via electrochemical deposition

The Luminescent Inhomogeneity and the Distribution of Zinc Vacancy-Related Acceptor-Like Defects in N-Doped ZnO Microrods

Nitrogen‐doped ZnO obtained by nitrogen plasma treatment

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