As-doped p-type ZnO produced by an evaporation∕sputtering process

Abstract

Strongly p-type ZnO is produced by the following sequence of steps: (1) evaporation of Zn3As2 on a fused-quartz substrate at 350°C; and (2) sputtering of ZnO with substrate held at 450°C. The electrical characteristics include: resistivity of 0.4Ωcm, a mobility of 4cm2∕Vs, and a hole concentration of about 4×1018cm−3. This resistivity is among the best (lowest) ever reported for p-type ZnO. Secondary-ion mass spectroscopic analysis gives an average As concentration about 5×1019cm−3, and a simple one-band fit of the temperature-dependent mobility curve yields an acceptor concentration of about 9×1019cm−3. This is strong evidence that the p-type dopant involves As, although it is not clear whether the acceptor is simply AsO or the recently suggested AsZn−2VZn.

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

“…This issue is of particular relevance, since it has been reported that not more than 5-13% of incorporated As can be electrically activated in ZnO [4,5,7]. The maximum concentration of As in our implanted sample (around 7.6×10 18 cm −3 ) is comparable with the As concentration used in most other studies.…”

“…In the case of the technologically promising II-VI compound ZnO, besides N [1,2] the heavy group-V elements P [1,2], As [2][3][4][5][6][7][8][9], and Sb [10][11][12] have been reported in the literature as possible p-type dopants. However, there is an ongoing debate whether for P, As, and Sb the p-type character results from these impuritities simply replacing O atoms, thus acting as simple "chemical" dopants [3,4,8], or is due to the formation of more complicated defect complexes [9,[12][13][14].…”

p -type behavior in nominally undoped ZnO thin films by oxygen plasma growth

“…[2][3][4] The realization of p-type ZnO has proven difficult due to its asymmetric doping limitations. 5 Fortunately, thanks to the considerable worldwide efforts, various elements have been used as p-type dopants for ZnO, such as N, 6-8 P, 9 As, 10 and Li. 11 However, it is the inexplicit p-type doping mechanism as well as the stability and reproducibility problems that become the bottleneck in the development of ZnO devices.…”

CREATING AND PROPERTIES OF ELECTRICAL CONTACTS OF Al AND Au ON THE Zn1-x Mnx O THING FILMS

“…Áàãàòî äîñë³äíèê³â âèâ÷àëè åëåêòðè÷í³ îì³÷í³ êîíòàêòè íà ZnO [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] . Îäíàê, ùî ñòî-ñóºòüñÿ äîñë³äaeåíü åëåêòðè÷íèõ êîíòàêò³â íà Zn 1-x Mn x O, íàñê³ëüêè íàì â³äîìî ç ë³òåðàòóðè, íå ïðîâîäèëîñÿ.…”