(Invited) Epitaxial Lift-Off of GaN and Related Materials for Device Applications

Abstract

The use of epitaxial lift-off with GaN and other III-N based materials offers substantial benefits for devices across a wide range of applications. Examples include devices for power control and conversion, microwave and millimeter-wave transmitters and receivers, sensors, LEDs and detectors, and many others. For these applications, epitaxial lift-off provides a key additional degree of freedom in fabrication processing and integration, offering potential benefits to the electrical, thermal, and optical properties of devices, as well as enhancing the ability of these devices to be heterogeneously integrated with other materials at low cost. We provide here an overview of this technology and its benefits.

Transferable Ga2O3 Membrane for Vertical and Flexible Electronics via One-Step Exfoliation

“…To exfoliate the 3D epitaxial membrane from the 3D substrate (so-called 3D/3D exfoliation), methods including laser-induced liftoff − and substrate removal (wet etching , and dry etching , ) have been used. However, these techniques suffer from either high cost, complexity, or low efficiency.…”