(Invited) Electrical Properties of (100) β-Ga₂O₃ Schottky Diodes with Four Different Metals

Abstract

In this study, electrical properties of four metals (W, Mo, Au, Ni) as Schottky contacts on n-type (100)-oriented β-Ga2O3 substrates grown by the Czochralski method are reported. The Schottky barrier heights for each metal contact were calculated from I-V and/or C-V measurements. Two methods were used to cross check the Schottky barrier heights (φB) and ideality factors (n) calculated from I-V measurements. The Schottky barrier height values calculated from C-V and I-V measurements showed excellent agreement with each other and increased with an increase in the metal work functions. Some anomalous behavior of Au contacts, which is similar to behavior reported on (010)-oriented β-Ga2O3, is also described.

Accelerated Aging Stability of β-Ga2O3–Titanium/Gold Ohmic Interfaces

“…Surprisingly, this effective barrier height is similar to that predicted using the Schottky–Mott rule by calculating the difference between the metal work function (ϕ Ti = ∼4.33 eV ) and electron affinity of the semiconductor (χ Ga 2 O 3 = 4.00 ± 0.05 eV) even though there is a Ti–TiO x layer at the interface. The effect of Fermi-level pinning observed for many Ga 2 O 3 Schottky junctions ,,, may or may not apply for the ohmic contact. Due to the nonlinearity of the I–V characteristics for sample B , temperature-dependent measurements were not performed.…”

Current State of Ga2O3-Based Electronic and Optoelectronic Devices. Brief Review

“…Jiang et al in ref. [56] also examined various metals for Schottky contact. The W, Mo, Au, and Ni were deposited onto an n-type -Ga 2 O 3 substrate grown by the Czochralski method.…”

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga2O3 Interface

“…Studies of electrical contacts to semiconductors provide an understanding of the interplay between fundamental material properties and metal–semiconductor interfaces, which are the building blocks for larger-scale, commercially employed devices such as Schottky barrier diodes , and power MOSFETs. Such studies of Schottky and ohmic contacts have been conducted on various orientations of β-Ga 2 O 3 , including the (100), − (2̅01), − (010), − and (001) , surfaces. Further, due to applications for β-Ga 2 O 3 under high temperatures, high electric fields, and high current densities, there is a significant desire to develop thermally stable contacts to withstand these conditions .…”