In situ integration of Te/Si 2D/3D heterojunction photodetectors toward UV-vis-IR ultra-broadband photoelectric technologies

Abstract

A Te/Si heterojunction photodetector array has been in situ constructed by performing pulsed-laser deposition of a Te nanofilm on a pre-patterned 2-inch SiO2/Si wafer, exhibiting ultra-broadband photosensitivity from ultraviolet to infrared.

High-performance hierarchical O-SnS/I-ZnIn2S4 photodetectors by leveraging the synergy of optical regulation and band tailoring

“…33 Most recently, it has been proven as a powerful tool to produce waferscale 2D materials including transition metal dichalcogenides 34 and elemental semiconductors. 35,36 Prior to the assembly of the heterostructures, the optimized growth conditions for preparing ZIS and SnS nanofilms have been systematically explored. The characterization results for pristine ZIS can be found in our preceding study, 20 while the characterization results for pristine SnS are summarized in Fig.…”

“…33 Most recently, it has been proven as a powerful tool to produce wafer-scale 2D materials including transition metal dichalcogenides 34 and elemental semiconductors. 35,36…”

Polarity-Reversible Te/WSe2 van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector

“…A shift in the transistor threshold voltage could be observed from the upper part of Figure d, indicating that both photoconductive and photogating effects contribute to photocurrent generation . Particularly, the peak R reaches 1.9 × 10 3 A W –1 for near-infrared 980 nm, corresponding to a calculated D of 2.8 × 10 12 Jones (Figure S13 of the Supporting Information), among the highest reported in Te-based photodetectors. ,− Figure f presents partial time-resolved response curves under 980 nm with a switching frequency of 0.1 and 0.2 Hz for ∼280 continuous cycles, revealing a steady photoresponse characteristic. The full I ph – t spectrum and corresponding response time are shown in Figure S14 of the Supporting Information.…”

TexSe1–x Photodiode Shortwave Infrared Detection and Imaging

“…Recently, researchers started to focus on the construction of the heterojunction of Te. Attempts have been made to form Te van der Waals heterojunctions utilizing 2D materials (such as MoS 2 , MoSe 2 , and graphene), Si and Ge etc., [26,[54][55][56][57][58] whereas suffering a slow photoresponse. Overall, the Te photodetectors mainly relied on single crystals or nanosheets and adopted the photoconductive (PC) or field-effect transistor (FET) structures, which are not conducive to CMOS integration.…”