<i>I-V</i> characteristics of MOS capacitors with polycrystalline silicon field plates

Neugebauer, C. A.; Burgess, James; Joynson, R. E.; Mundy, Joseph L.

doi:10.1063/1.1661066

Cited by 16 publications

(5 citation statements)

References 4 publications

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“…A practical use for the phenomenon was found with the introduction of the FAMOS 1 device (8). These problems induced further studies (9)(10)(11)(12)(13).…”

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confidence: 99%

The Effects of Processing on Hot Electron Trapping in SiO2

Gdula

1976

J. Electrochem. Soc.

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Avalanche injection of hot electrons into the insulator of an MOS capacitor has been used to study electron trapping in SiO2. Oxides formed by thermal oxidation in dry O~, 02 -5 HC1, 02 -5 I-I20, steam, and chemical vapor-deposited (CVD) SiO2 were subjected to avalanche charging. Pure, dry thermal SiO2 was found to trap up to 2.6 X 10 TM e/cm 2. The trapping efficiency of SiO~ varied by three orders of magnitude, depending on forming and annealing conditions.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 129.115.103.99 Downloaded on 2015-06-15 to IP ABSTRACTThe electrical conductivity of fl-PbF2 in single crystal and pressed pellets was measured by a-c bridge techniques. Aliovalent cation fluoride doping was used to elucidate the conductivity mechanism in the extrinsic region, 25~176Conduction was shown to be via fluoride ion vacancies. Potassium fluoride dopant increased the ionic conductivity of ~-PbFe from 5 • 10 -7 to 1 • 10 -8 ohm-~-cm -J at room temperature. However, galvanic cells utilizing the higher conductivity of the doped material failed due to formation of a passivation layer of pure ~-PbF2 at the anode/electrolyte interface. * Electrochemical Society Active Member.

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“…A practical use for the phenomenon was found with the introduction of the FAMOS 1 device (8). These problems induced further studies (9)(10)(11)(12)(13).…”

mentioning

confidence: 99%

The Effects of Processing on Hot Electron Trapping in SiO2

Gdula

1976

J. Electrochem. Soc.

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“…The third method was based on the drop in value of the initial permeability near the Curie point; the initial permeability was measured using a device the main features of which are described in Ref. (11). In all cases, the rate of heating of the oven containing the sample was 5 deg/min and was held strictly constant.…”

Section: Methodsmentioning

confidence: 99%

Improved Dielectric Reliability of SiO2 Films with Polycrystalline Silicon Electrodes

Osburn

Bassous

1975

J. Electrochem. Soc.

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Time dependent dielectric breakdown of SiO2 films in MOS structures is shown to be strongly dependent on the electrode material used. Polycrystalline silicon electrodes give substantially longer times to failure than do aluminum electrodes. The improvement is 3–4 decades at 300°C; and, because of the larger activation energy for wearout with poly‐Si (2.4 eV) compared to Al (1.4 eV), the relative advantage would be 8–16 decades at room temperature. Although time to breakdown is a strong function of SiO2 thickness when the electrode is Al, it is nearly independent of thickness for structures having poly‐Si electrodes.

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“…Neugebauer et al 14 reported current decay for both positive and negative gate biases. Hiruta et al, 15 Ushizaka and Sato 16 and Abadeer et al 17 showed that the interface-state density at the Si-SiO 2 interface increases when the gate is biased positively.…”

Section: Comparison With Instabilities Reported Elsewherementioning

confidence: 97%

“…This negative shift ͑instability͒ was explained by Nakayama et al 13 as the effect of ethyl alcohol or acetone. Neugebauer et al 14 reported current decay for both positive and negative gate bias. Hiruta et al 15 found that the interface-state density at the Si-SiO 2 interface increases when the gate is biased positively.…”

Section: Introductionmentioning

confidence: 97%

“…[4][5][6][7][8][9][10][11] Many investigators have reported various instabilities related to boron-doped poly-silicon gate MOS structures. [12][13][14][15][16][17] Faggin et al 12 showed that the threshold voltage of MOS transistors shifts negatively when the gate voltage is positively biased. This negative shift ͑instability͒ was explained by Nakayama et al 13 as the effect of ethyl alcohol or acetone.…”

Section: Introductionmentioning

confidence: 99%

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Current increase in thin gate-oxide (3.5–7.0 nm) metal–oxide–silicon structures with the boron-doped polycrystalline-silicon gates biased negatively

Itsumi

Satō

Nakayama

et al. 1997

Journal of Applied Physics

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We have investigated gate-current instability in boron-doped polycrystalline-silicon gate metal–oxide–silicon structures. Gate-current increase is observed only for oxide thicknesses of 3.5–7.0 nm and for negative gate voltage. The current-increase characteristics are reversible for positive and negative bias cycles. When the gate is negatively or positively biased, the flatband voltage remains constant, suggesting that there is no positive charge buildup at the Si–SiO2 interface. The experimental results suggest that a positive charge buildup or the formation of a conductive region at the gate–SiO2 interface is involved in the current increase. A model for this current instability is presented.

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I-V characteristics of MOS capacitors with polycrystalline silicon field plates

Cited by 16 publications

References 4 publications

The Effects of Processing on Hot Electron Trapping in SiO2

The Effects of Processing on Hot Electron Trapping in SiO2

Improved Dielectric Reliability of SiO2 Films with Polycrystalline Silicon Electrodes

Current increase in thin gate-oxide (3.5–7.0 nm) metal–oxide–silicon structures with the boron-doped polycrystalline-silicon gates biased negatively

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