I−V Characteristics of Metal−Oxide−ZnSe Nanowire Structure

Abstract

The electron transport of metal-insulator-semiconductor nanowire (MIS) structure consisting of the Al electrode covered by a thin alumina oxide layer and a single ZnSe nanowire was studied experimentally. The I-V measurement of an individual ZnSe nanowire contacted to Au and the alumina oxide covered Al electrodes, which resulted in metal-semiconductor (MS) and MIS structures at Au/ZnSe and Al/AlOx/ZnSe interfaces, respectively, has been carried out by in situ transmission electron microscopy (TEM). These measured I-V curves have the typical nonlinear feature coincident with the Schottky contact barriers at the interfaces between the semiconductor and metal electrodes. There is no current recorded between (3.8 V, and the threshold voltage range was therefore examined. This high threshold voltage obviously resulted from the thin alumina oxide layer at the surface of the Al electrode, which acts as an insulator and, consequently, results in high contact barrier. The asymmetrical characteristics resulting from slow increase in current under the reverse bias can be explained by part of the electrons in Al electrode tunneling the alumina oxide at the energy levels corresponding to the position of the bandgap of the ZnSe semiconductor.

One-dimensional II–VI nanostructures: Synthesis, properties and optoelectronic applications

“…Schottky contacts are normally formed for various electrode metals such as Ag [52], Cr [164,165], Au [166][167][168], and Pt:Ga [169]. Although several reports indicated that Ti could form Ohmic contact with unintentionally doped n-ZnSe NWs [170], we note that reliable and reproducible Ohmic contact of Ti to n-ZnS and n-ZnSe nanostructures is still hard to achieve.…”

Theoretical Study on the Al-Doped ZnO Nanoclusters for CO Chemical Sensors

“…Metal oxides, such as MgO, ZnO, and In 2 O 3 , are commonly employed in chemical gas sensors, changing the electrical conductivity of these materials upon adsorption of gaseous molecules. − ZnO is a semiconductive metal oxide with a wide direct band gap which has high prospects in optoelectronics, especially because of its high excitation binding energy . The ZnO was used in chemoresistive sensors to detect several gases, such as H 2 , NH 3 , CH 4 , O 2 , ethanol, and CO. − Nanostructured ZnO with different morphologies (such as nanoparticles, nanowires, and nanorods) has been extensively studied for gas sensor applications due to its favorable morphological, microstructural, and electrical properties. , …”

Study of Schottky contact between Au and NiO nanowire by conductive atomic force microscopy (C-AFM): The case of surface states

“…That is, the barrier height did not follow the differences in the work function value, but was mostly dominated by the surface states or band bending in NiO itself as point by Zhang et al [25]. When the density of surface states was high enough, the barrier height controlled by the surface states must dominate the I-V rectifying behavior [26]. And the rectifying behavior observed in our experiment was just the case as shown in Fig.…”