I-Udependence of TlIn<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="italic">X</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>(X=Se,Te) single crystals: The Ohmic andS-type regions

Hanias, M. P.; Anagnostopoulos, A. N.; Kambas, K.; Spyridelis, J.

doi:10.1103/physrevb.43.4135

Cited by 68 publications

(50 citation statements)

References 21 publications

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“…Both the hot probe technique and the sign of the Hall coefficient indicated that the samples exhibit p-type conduction [11]. The sample was attached to the copper holder using silver paste.…”

Section: Methodsmentioning

confidence: 99%

“…TlInSe 2 has the indirect and direct optical band gaps E gi = 1.07 eV and E gd = 1.35 eV at room temperature, respectively [10]. TlInSe 2 compound exhibits, in its electrical behavior, many nonlinear effects, such as S-type characteristics with voltage oscillations in the negative resistance region, and switching and memory effects [11]. * corresponding author; e-mail: nizami@metu.edu.tr…”

Section: Introductionmentioning

confidence: 99%

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Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe₂Chain Crystals

Gasanly

Yıldırım

2011

Acta Phys. Pol. A

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Thermally stimulated current measurements were carried out on as-grown TlInSe 2 single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K s −1 . The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 × 10 13 and 3.4 × 10 12 cm −3 ) and capture cross section (4.1 × 10 −28 and 2.9 × 10 −26 cm 2 ) of the traps were estimated for peaks A and B, respectively. It was concluded that in these centers retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe₂Chain Crystals

Gasanly

Yıldırım

2011

Acta Phys. Pol. A

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“…A high photosensitivity in the visible range of spectra and a wide transparency range of 0.5−14 μm makes TlInS 2 crystal useful for optoelectronic applications [7]. TlInSe 2 compound exhibits, in its electrical behavior, many nonlinear effects, such as S−type characteristics with voltage oscillations in the negative resistance region, and switching and memory effects [8].…”

Section: Introductionmentioning

confidence: 99%

Effect of isomorphic atom substitution on the refractive index and oscillator parameters of TlInS_2xSe_2(1‐x) (0.25 ≤ x ≤ 1) layered mixed crystals

Gasanly

2010

Cryst. Res. Technol.

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The optical properties of TlInS 2x Se 2(1-x) mixed crystals (0.25 ≤ x ≤ 1) have been studied at room temperature through the transmittance and reflectivity measurements in the wavelength range of 400-1100 nm. The spectral dependence of the refractive index for all compositions of studied crystals were obtained. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The compositional dependencies of refractive index dispersion parameters: oscillator energy, dispersion energy and zero-frequency refractive index were revealed.

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“…TlInSe 2 , with the quasi-one-dimensional chain structure has attracted much interest because of the negative differential resistance [2] and interesting thermoelectric properties [3,4]. TlInSe 2 crystallizes in a tetragonal system with a body-centered lattice and space group symmetry D 18 4h (I4/mcm) at ambient conditions.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and effective masses of TlInSe₂ under pressure

Оруджев

Ismayilova

Jafarova

2017

Materials Science-Poland

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We have studied the band structure and the band gap closure of TlInSe 2 under pressure in the range of 0 GPa to 21 GPa, by employing the first-principles method based on the density functional theory. We discuss the possible metallic transition in the tetragonal phase of TlInSe 2 crystal. Our calculation results show that the value of the pressure at the crossover from the direct to the indirect gap is found to be 8 GPa. The "semiconductor-metal" transition is determined to occur at 14 GPa. The study of the pressure effect on the effective masses for semiconductor state shows that with increasing pressure, the effective masses of holes and electrons decrease and the anisotropy of effective masses of holes is weakening.

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I-Udependence of TlInX2(X=Se,Te) single crystals: The Ohmic andS-type regions

Cited by 68 publications

References 21 publications

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe₂Chain Crystals

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe₂Chain Crystals

Effect of isomorphic atom substitution on the refractive index and oscillator parameters of TlInS_2xSe_2(1‐x) (0.25 ≤ x ≤ 1) layered mixed crystals

Electronic structure and effective masses of TlInSe₂ under pressure

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I-Udependence of TlInX2(X=Se,Te) single crystals: The Ohmic andS-type regions

Cited by 68 publications

References 21 publications

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe2Chain Crystals

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe2Chain Crystals

Effect of isomorphic atom substitution on the refractive index and oscillator parameters of TlInS2xSe2(1‐x) (0.25 ≤ x ≤ 1) layered mixed crystals

Electronic structure and effective masses of TlInSe2 under pressure

Contact Info

Product

Resources

About

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe₂Chain Crystals

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe₂Chain Crystals

Effect of isomorphic atom substitution on the refractive index and oscillator parameters of TlInS_2xSe_2(1‐x) (0.25 ≤ x ≤ 1) layered mixed crystals

Electronic structure and effective masses of TlInSe₂ under pressure