I
 n s
 i
 t
 u growth rate measurements during molecular beam epitaxy using an optical pyrometer

SpringThorpe, A. J.; Humphreys, T. P.; Majeed, Abdul; Moore, W. T.

doi:10.1063/1.102082

Cited by 64 publications

(26 citation statements)

References 11 publications

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“…In both cases, intensity oscillations resulting from interference effects in the growing semiconductor layer can be monitored as a function of time and wavelength. From such oscillations, GaAs and AlAs growth rates can be calculated using the formula G = 0 /2nT [17,18], where G is the growth rate, T is the time period of intensity oscillations at a specific wavelength ( 0 ), and n is the material refractive index at the growth temperature. In this formula, 0 is fixed and T can be easily obtained from the oscillation curve.…”

Section: Growth Calibrationmentioning

confidence: 99%

The MBE growth and optimization of high performance terahertz frequency quantum cascade lasers

Li¹,

Zhu²,

Chen³

et al. 2015

Opt. Express

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Abstract:The technique of molecular beam epitaxy has recently been used to demonstrate the growth of terahertz frequency GaAs/AlGaAs quantum cascade lasers (QCL) with Watt-level optical output powers. In this paper, we discuss the critical importance of achieving accurate layer thicknesses and alloy compositions during growth, and demonstrate that precise growth control as well as run-to-run growth reproducibility is possible. We also discuss the importance of minimizing background doping level in maximizing QCL performance. By selecting high-performance active region designs, and optimizing the injection doping level and device fabrication, we demonstrate total optical (twofacet) output powers as high as 1.56 W.

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Section: Growth Calibrationmentioning

confidence: 99%

The MBE growth and optimization of high performance terahertz frequency quantum cascade lasers

Li¹,

Zhu²,

Chen³

et al. 2015

Opt. Express

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“…Interestingly, pyrometric interferometry was used in a microwave plasma-assisted CVD process for in situ control of the growth rate of diamond thin film, which is transparent to the radiation detected by the pyrometer [16,17]. This method was also used during MBE growth of partially opaque layers of III-V semiconductors [18] and device heterostructures [19].…”

Section: Introductionmentioning

confidence: 99%

Diagnostic in TCOs CVD processes by IR pyrometry

Maury¹,

Duminica²

2007

Thin Solid Films

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OATAO is an open access repository that collects the work of Toulouse researchers and makes it freely available over the web where possible. AbstractInfra red pyrometry is a sensitive, simple and low-cost technique commonly used for the measurement of the deposition temperature in CVD processes. We demonstrate in this work that this optical technique can be used as diagnostic tool to provide fruitful informations during the growth under atmospheric pressure of TiO 2 films on various substrates chosen as an example of transparent oxide. Significant variations of the pyrometric signal were observed during the deposition of TiO 2 thin films due to interferences in the growing film resulting from multi-reflections at the interfaces and scattering induced by the surface roughness. Modeling of the time dependence of the IR pyrometric signal allows simultaneously the determination of the layer thickness, the growth rate, surface roughness and refractive index of the thin films under the growth conditions. This diagnostic technique can be used for various transparent thin films grown on opaque substrates and is well adapted to control CVD processes operating either under atmospheric or low pressure and more generally any thermal treatment processes.

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“…In addition to the calibration done prior to the growth, the DBR runs were controlled in situ using the pyrometric interference technique [10][11][12]. The pyrometric interference technique is a very convenient alternative to the most commonly used in situ refractometry or elipsometry.…”

Section: Photo-detectorsmentioning

confidence: 99%

“…This layer was followed by DBR which consisted of 7 pairs of (In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As):Si designed for high reflectance at 1.55 µm. The doping concentration in DBR layers was equal to 10 19 cm −3 . It results in the red shift of the absorption edge of the In 0.52 Al 0.48 As and especially In 0.53 Ga 0.47 As layers beyond the spectral range of interest.…”

Section: Photo-detectorsmentioning

confidence: 99%

Optoelectronic Devices Employing One-Dimensional Photonic Structures

Muszalski

2008

Acta Phys. Pol. A

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This paper reviews the experimental and theoretical results obtained during work on the modern semiconductor devices employing onedimensional photonic structures. After short review of the physical features of structures consisting of 1D stack of the alternating high and low index layers, particular attention will be given to unique features of the devices employing microcavities: resonant cavity LEDs, resonant-cavity enhanced photo-detectors, vertical cavity surface emitting lasers, and also vertical external cavity surface emitting lasers. At the end the semiconductor saturable absorber mirrors are discussed.

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I n s i t u growth rate measurements during molecular beam epitaxy using an optical pyrometer

Cited by 64 publications

References 11 publications

The MBE growth and optimization of high performance terahertz frequency quantum cascade lasers

The MBE growth and optimization of high performance terahertz frequency quantum cascade lasers

Diagnostic in TCOs CVD processes by IR pyrometry

Optoelectronic Devices Employing One-Dimensional Photonic Structures

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