Hydrogen-radical durability of TiO2 thin films for protecting transparent conducting oxide for Si thin film solar cells

Preparation of wide gap and low resistive hetero-structured SiCX films as wide gap window of solar cells

“…In the deposition by hot-wire CVD at lower T f , the contamination of the filament materials into the films is prevented [10]. In low T S deposition, the ZnO films protect TCO films from hydrogen radicals with out sublimation [12]. In order to check the damage of the TCO film, the B-doped hetero-structure SiC X film was also deposited on the ZnO coated SnO 2 substrate by hot-wire CVD under the low T S condition.…”

Applications of microcrystalline hydrogenated cubic silicon carbide for amorphous silicon thin film solar cells

“…Phosphine (PH 3 ) gas was utilized as a doping gas for the deposition of P-doped n-type μc-3C-SiC:H thin films. For deposition of μc-3C-SiC:H films on TCO, we applied the TiO 2 covering technique [6] to avoid the reduction of the TCO because the deposition of μc-3C-SiC:H was performed under a high density of atomic hydrogen. Normally, the deposition of μc-3C-SiC:H on a-Si:H and μc-Si:H is impossible because of etching by atomic hydrogen.…”

“…In our previous work, we reported a conversion efficiency of 4.5% with a V oc of 0.885 V [5] for a-Si:H based n-i-p type solar cells using the phosphorus doped n-type μc-3C-SiC:H, and demonstrated that the successful deposition of μc-3C-SiC:H on TCO is caused by our proposed covering technique of TiO 2 on TCO [6]. However, the deposition conditions of this cell were not optimized.…”

Towards very low-cost mass production of thin-film silicon photovoltaic (PV) solar modules on glass

“…optimized with respect to minimizing absorption, especially free carrier absorption (FCA) [18]. This may lead to rather sophisticated tandem cell structures, with a double TCO layer [22,23], such as shown, for example, in Fig. 6.…”

“…In this figure a high-mobility TCO, like SnO 2 or ITiO or ITO is suggested as a first layer, in order to obtain a high conductivity without increasing the carrier concentration and, thus, the FCA; thereafter, one may deposit a thin layer of ZnO or TiO 2 : this layer should act as a diffusion barrier, because of its more inert behaviour, during the subsequent plasma-assisted deposition of the thin-film silicon layers (see e.g. [22]). …”