No abstract

No abstract

No abstract

No abstract

Nitrogen (N) and phosphorus (P) doped n‐type hydrogenated microcrystalline cubic silicon carbide (μc‐3C‐SiC:H) films have been prepared by VHF plasma enhanced chemical vapor deposition method for Si thin film solar cells. Ammonia (NH3) is employed as a N source. We show that the dark conductivity of the film reaches a value of about 10‐2 S/cm by doping N and P for a doping ratio of 0.8%. Further, it is found from x‐ray diffraction measurements that the crystalinity of N‐doped μc‐3C‐SiC:H films is better compared with that of P‐doped materials. NH3 seems to be one of useful materials for a N source of n‐type doping in μc‐3C‐SiC:H films. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)