Applications of microcrystalline hydrogenated cubic silicon carbide for amorphous silicon thin film solar cells

Ogawa, Sachiko; Okabe, Masaaki; Ikeda, Y.; Itoh, Takashi; Yoshida, Norimitsu; Nonomura, Shuichi

doi:10.1016/j.tsf.2007.06.047

Cited by 10 publications

(4 citation statements)

References 5 publications

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“…For the purpose of improving the i/p interfaces of the a-Si:H solar cells, some methods have been developed including the application of a buffer layer inserted between the i-and p-layers. Since Hamakawa group proposed p-type amorphous silicon carbide (p-a-SiC:H) as the window material, a-SiC:H has been widely used for making both i/p buffer and p-layer [3][4][5]. Some groups adopted either protocrystalline a-Si:H [6,7] or boron-doped microcrystalline silicon (p-μc-Si:H) [8] as the buffer layer instead of the conventional a-SiC:H buffer layer, however they still used the a-SiC:H as the p-layer.…”

Section: Introductionmentioning

confidence: 99%

Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure

Liu

Zeng

Peng

et al. 2011

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 99%

Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure

Liu

Zeng

Peng

et al. 2011

Journal of Non-Crystalline Solids

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“…The amorphous silicon solar cell has been studied widely to increase the conversion efficiency in many years [1][2]. Using a p-type silicon carbide film as the window layer for an amorphous silicon thin film solar cell is known to be one key to achieve high conversion efficiency [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Graded Buffer Layer Effect on Performance of the Amorphous Silicon Thin Film Solar Cells

Lien

Yang

Lin

et al. 2011

MSF

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It is widely accepted that graded buffer layer between the p-layer and i-layer increase the efficiency of amorphous silicon solar cells. The open-circuit voltage (Voc), short current density (Jsc) and fill factor (FF) of the thin film solar cell are obviously increased. In the present study, hydrogenated amorphous silicon (a-Si:H) thin film solar cells have been fabricated by 27.12 MHz plasma enhanced chemical vapor deposition (PECVD). We discussed the three conditions at the p/i interface without buffer layer, buffer layer and graded buffer layer of thin film solar cells by TCAD software. The influences of the performance of the solar cell with the different buffer layer are investigated. The cell with graded buffer layer has higher efficiency compared with the cells without buffer layer and buffer layer. The graded buffer layer enhances the conversion efficiency of the solar cell by improving Vocand FF. It could be attributed to a reduction of interface recombination rate near the junction. The best performance of conversion efficiency (η)=8.57% (Voc=0.81 V, Jsc=15.46 mA/cm2, FF=68%) of the amorphous silicon thin film solar cell was achieved.

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“…Stoichiometric cubic‐like microcrystalline silicon carbide (μc‐SiC:H) thin films have been successfully deposited by the Hot‐Wire Chemical Vapor Deposition (HWCVD) technique at low substrate temperatures 1, 2. Such material is a promising window layer for silicon solar cells, due to its high transparency with an optical band gap of about 2.8 eV 1–4 and better optical matching which can be used for an anti‐reflection layer 5. This μc‐SiC:H material is unintentionally n‐type doped with a high conductivity in the as‐grown state 1, 6.…”

Section: Introductionmentioning

confidence: 99%

Microcrystalline silicon thin film solar cells with microcrystalline silicon carbide window layers and silicon absorber layers both prepared by Hot‐Wire CVD

Chen

Huang

Yang

et al. 2010

Physica Rapid Research Ltrs

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Microcrystalline silicon carbide (μc‐SiC:H) window layers prepared by Hot‐Wire Chemical Vapor Deposition (HWCVD) were applied in thin film silicon solar cells with microcrystalline silicon (μc‐Si:H) absorber layers. The intrinsic μc‐Si:H absorber was prepared by HWCVD or Plasma Enhanced Chemical Vapor Deposition (PECVD) over a wide range of crystalline volume fractions. With both types of absorber layers high solar cell short circuit current densities (jSC) can be obtained due to the highly transparent μc‐SiC:H window layer and better optical matching. Using the μc‐Si:H absorber prepared by HWCVD yields an additional improvement in the open circuit voltage (VOC) of about 20 mV. A 1 μm thick μc‐Si:H cell was obtained with VOC = 549 mV and jSC = 25.6 mA/cm2 resulting in an efficiency of 9.2%. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Applications of microcrystalline hydrogenated cubic silicon carbide for amorphous silicon thin film solar cells

Cited by 10 publications

References 5 publications

Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure

Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure

Graded Buffer Layer Effect on Performance of the Amorphous Silicon Thin Film Solar Cells

Microcrystalline silicon thin film solar cells with microcrystalline silicon carbide window layers and silicon absorber layers both prepared by Hot‐Wire CVD

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