Abstract:It is widely accepted that graded buffer layer between the p-layer and i-layer increase the efficiency of amorphous silicon solar cells. The open-circuit voltage (Voc), short current density (Jsc) and fill factor (FF) of the thin film solar cell are obviously increased. In the present study, hydrogenated amorphous silicon (a-Si:H) thin film solar cells have been fabricated by 27.12 MHz plasma enhanced chemical vapor deposition (PECVD). We discussed the three conditions at the p/i interface without buffer layer… Show more
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