Effect of oxide based graded buffer and bottom n-layer on the performance of the single junction amorphous silicon solar cells

Das, Gourab; Mandal, Sourav; Sumita, Masao; Banerjee, Chandan

doi:10.1007/s10854-017-7517-y

Cited by 2 publications

(1 citation statement)

References 13 publications

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“…Increasing the width of the optical gap with the presence of carbon in the network layer of the p-type a-SiC: H followed by a worsening of its electrical properties and increased disorder [9][10][11]. The presence of carbon can increase the width of the state density in the tail region of the energy band, which can decrease the drift mobility thus worsening the electrical properties, whereas the reduction in disorder is thought to be due to the presence of trigonal C=C sp 2 in the sp 3 tetrahedral amorphous network [12][13]. The state density in the tail of the valence and conduction bands is reflected in the slope of the optical absorption curve so that it can be used to determine the electrical properties and amorphous semiconductor disorder.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Increased Methane Flow Rate on Electronic Correlation of Amorphous Silicon Carbon (a-SiC: H)

Prayogi

Sholehah

Cahyono

et al. 2021

Preprint

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In this study, we report for the first time that the addition of methane (CH4) flow rate in the p-type a-SiC: H layer greatly affects the electronic correlation in increasing the conversion efficiency of solar cells. The a-SiC: H p-type layer was grown using Plasma Enhanced Chemical Vapor Deposition (PECVD) on Indium Tin Oxide (ITO) substrate with various methane flow rates. The a-SiC: H p-type layer was characterized including the complex dielectric properties and the complex refractive index using Ellipsometric Spectroscopy (ES), while the surface roughness morphology was used Atomic Force Microscopy (AFM). In sample P-2 there is a change in the form of a decrease in the value of the refractive index < n > and the E0 energy in the lower energy compared to the P-1 sample with a change of 0.3 eV, an increase in the optical gap and a decrease in the value of the real and imaginary dielectric function. While the influence of an increase in the carbon composition of the amorphous network order shows the addition of amorphous tissue disorder. Our results, show that the optical magnitude of the p-type a-SiC: H layer is not only affected by the amount of carbon in the film but also the hydrogen which is thought to contribute.

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