Hydrogen post-etching effect on CVD diamond film

Heavily doped polycrystalline thin diamond films were prepared by chemical vapor deposition. Boron was introduced in the films during the deposition. The electrical activity of acceptors was studied using dc polarization technique and bulk admittance spectroscopy. In the concentration range of 10'7-1020 cm -3 we have observed the occurrence of Hubbard interaction and band splitting. The conductivity of the films is mobility limited, and the pre-exponential factor of (T(T) decreases as the total concentration of boron increases. The occurrence of boron-defect clustering has been detected, and its effect on the majority-carrier injection level is discussed.Doping of diamond under controlled conditions is of paramount importance in the development of high-temperature high-power electronic devices. However, in spite of the large efforts in this direction, reliable control over the majority-carrier level in doped diamond has not been attained.

show abstract

“…This was Paper 499 presented at the Seattle, WA, Meeting of the Society, Oct. [14][15][16][17][18][19]1990.…”

mentioning

confidence: 99%

Defect Clustering and Boron Electrical Deactivation in p‐Doped Polycrystalline Diamond Films

Narducci

Guarnieri

Cuomo

1991

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…9 The hydrogen termination of diamond is most commonly achieved by microwave-assisted plasma treatment [10][11][12][13][14][15][16][17][18][19][20][21][22][23] or by hot-filament-assisted treatment. [24][25][26][27][28][29] The interaction of atomic hydrogen with the (100) diamond surface has been the subject of many investigations using a variety of experimental and theoretical methods. 10,11, A detailed understanding of the role of hydrogen interactions requires studies on well defined planes of diamond.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen plasma interaction with (100) diamond surfaces

Stoikou

2011

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

Polycrystalline diamond films exhibiting (100) oriented surfaces have been subject to a low pressure hydrogen plasma for durations up to 20 h. The topography of spatially defined 20 × 20 μm areas of the samples were imaged by atomic force microscopy at intervals during the plasma exposure. The mean surface roughness of individual (100) crystallites decreased from ca. 2.4 nm to <1 nm over the period and was independent of the twist and tilt angles of the crystallite. Whilst small hillock growth features were etched completely by the plasma treatment, there was no evidence for etch pits evident in similar experiments carried out with (100) natural diamond. Very low lateral etch rates of the (100) crystallites of 28 ± 4 nm/h were measured for crystallites bounded by (111) planes. High resolution XPS analysis of the C(1s) and O(1s) transitions of the same samples showed that the surface graphitic phase, present in the as-prepared samples, was removed to below detectable limits. The surface oxygen content was reduced from around 9-10% to ca. 3% after prolonged plasma exposure. The C(1s) and O(1s) band contours revealed the presence of oxygen in the form of ether and carbonyl functional groups. The ether:carbonyl: areal density ratio on (100) crystallites decreased only slightly from 83:17 to 64:37 after 20 h of plasma treatment based on fitting of the O(1s) band envelope. Etching products arising from the plasma interaction with the diamond surface were not detected by either optical emission spectroscopy or mass spectrometry.

show abstract

“…Etching of diamond films has been investigated by many researchers using various techniques which are summarized [1][2][3][4][5][6][7][8][9][10][11] in Table I. However, direct-current (dc) plasma has not been used for etching of diamond, and only few attempts have been done to fabricate patterns of diamond films by etching.…”

Section: Introductionmentioning

confidence: 99%

Etching of polycrystalline diamond films by electron beam assisted plasma

et al. 1996

View full text Add to dashboard Cite

Polycrystalline diamond films were processed in a direct current plasma produced by a self-focused electron beam using combinations of H 2 , O 2 , and He as the processing gas. The film surfaces were observed by scanning electron microscopy, and characterized by x-ray photoelectron spectroscopy. It was found that for the case in which O 2 was included in the processing gas, a high density of etch pits appeared on (100) faces of diamond grains, and oxygen was either physisorbed or chemisorbed at the film surface. It was demonstrated that the etching apparatus used was capable of forming at least a 5-mm wide pattern of polycrystalline diamond film.

show abstract

Hydrogen post-etching effect on CVD diamond film

Cited by 17 publications

References 6 publications

Defect Clustering and Boron Electrical Deactivation in p‐Doped Polycrystalline Diamond Films

Defect Clustering and Boron Electrical Deactivation in p‐Doped Polycrystalline Diamond Films

Hydrogen plasma interaction with (100) diamond surfaces

Etching of polycrystalline diamond films by electron beam assisted plasma

Contact Info

Product

Resources

About