Hydrogen Passivation of the Dislocation-Related D-Band Luminescence in Silicon

Weronek, K.; Weber, J.; Queisser, H. J.

doi:10.1002/pssa.2211370224

Cited by 12 publications

(8 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1) are in good agreement with previous results [5,13], and demonstrate that the deformations at 700 C were performed under clean conditions. Actually, the three parameters tuned in the experiments (Fig.…”

Section: Discussionsupporting

confidence: 91%

See 1 more Smart Citation

Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon

Feklisova

Mariani-Regula²,

Pichaud

et al. 1999

phys. stat. sol. (a)

View full text Add to dashboard Cite

Section: Discussionsupporting

confidence: 91%

“…In particular, the effect of transition metal [3,4] or hydrogen impurities [5,6] has been extensively studied. However, the effect of oxygen has been the object of less attention although it is one of the most important impurities in Si.…”

Section: Introductionmentioning

confidence: 99%

Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon

Feklisova

Mariani-Regula²,

Pichaud

et al. 1999

phys. stat. sol. (a)

View full text Add to dashboard Cite

“…In previous reports, Dube and Hanoka [81] reported that hydrogen was able to passivate dislocations for depths up to 250 µm in string ribbon silicon. Furthermore, Weronek et al [86] reported the hydrogenation of the extended defects-related D-Band luminescence in silicon. In detail, it was found that hydrogenation at 300 • C are able to reduce the D1 and D4 band intensities but increase the intensities of the D2 and D3 bands.…”

Section: Passivation Of Extended Defectsmentioning

confidence: 99%

Progress of hydrogenation engineering in crystalline silicon solar cells: a review

Song¹,

Hu²,

Lin³

et al. 2022

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Crystalline silicon solar cells are always moving towards “high efficiency and low cost”, which requires continuously improving the quality of crystalline silicon materials. Nevertheless, crystalline silicon materials typically contain various kinds of impurities and defects, which act as carrier recombination centers. Therefore these impurities and defects must be well controlled during the solar cell fabrication processes to improve the cell efficiency. Hydrogenation of crystalline silicon is one important method to deactivate these impurities and defects, which is so-called “hydrogenation engineering” in this paper. Hydrogen is widely reported to be able to passivate diverse defects like crystallographic defects, metallic impurities, boron-oxygen related defects and etc, but the effectiveness of hydrogen passivation depends strongly on the processing conditions. Moreover, in this decade, advanced hydrogenation technique has been developed and widely applied in the photovoltaic industry to significantly improve the performance of silicon solar cells. As the research on hydrogenation study has made a significant progress, it is the right time to write a review paper on introducing the state-of-the-art hydrogenation study and its applications in photovoltaic industry. The paper first introduces the fundamental properties of hydrogen in crystalline silicon and then discusses the applications of hydrogen on deactivating/inducing typical defects (e.g. dislocations, grain boundaries, various metallic impurities, boron-oxygen related defects and LeTID) in p- and n-type crystalline silicon, respectively. At last, the benefits of hydrogenation engineering on the next-generation silicon solar cells (e.g. TOPCon and HJT solar cells) are discussed. Overall, it was found that hydrogen can deactivate most of typical defects (sometimes induce defect) in n- and p-type crystalline silicon, leading to a significant efficiency enhancement in PERC, TOPCon and HJT solar cells. In conclusion, the paper aims to assist young researchers to better understand hydrogenation research and shed light on the future development of hydrogenation study.

show abstract

“…There has been an extensive study of dislocation-related photoluminescence in Si [5][6][7] and Si 1−x Ge x alloys [8][9][10]. From an experimental point of view, D1/D2 and D3/D4 bands have similar origins due to similarities in their optical properties.…”

Section: Introductionmentioning

confidence: 99%

“…From an experimental point of view, D1/D2 and D3/D4 bands have similar origins due to similarities in their optical properties. The radiative recombination process in these alloys can originate either from impurity-related transitions or from the intrinsic property of the dislocation [6].…”

Section: Introductionmentioning

confidence: 99%