Defect studies in strain-relaxed Si$_{1-x}$Ge$_{x}$ alloys

Abstract

Raman light scattering, low-temperature photoluminescence, light-scattering tomography, and hydrogenation were used to investigate optical properties of defects in strain-relaxed Si 1−x Ge x (0.05 ≤ x ≤ 0.50) alloys. The pho- Raman spectra reveal the presence of alloy fluctuations and possible presence of Ge particles, particularly in Ge-rich samples.

1320 nm Light Source From Deuterium Treated Silicon

“…Moreover, it was reported that hydrogenation enhances particularly D3 band at around 1300 nm in Si [46]. The nature of these defects however is not yet clear, but the compensation of dangling bonds in both examples is likely the main reason for the photoluminescence enhancement.…”

“…Other example shows that hydrogen ion implantation could lead to optically active defects, which can generate 1300 nm light emission in Si [45]. Moreover, it was reported that hydrogenation enhances particularly D3 band at around 1300 nm in Si [46]. The nature of these defects however is not yet clear, but Localized vibrational bands observed in deuterium treated samples as compared to samples treated without deuterium.…”